DMN5L06DMKQ-7

DMN5L06DMKQ-7

$0.14
  • Description:MOSFET 2N-CH 50V 0.305A SOT26
  • Series:-

SKU:749bab914f5c Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 50V 0.305A SOT26
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):50V
  • Current - Continuous Drain (Id) @ 25°C:305mA
  • Rds On (Max) @ Id, Vgs:2Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:50pF @ 25V
  • Power - Max:400mW
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-6
  • Supplier Device Package:SOT-26
  • Grade:-
  • Qualification:-

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DMN5L06DMKQ-7

Overview

The DMN5L06DMKQ-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (Vdss) of 50 V and a continuous drain current (Id) of 280 mA at 25°C ambient temperature. The device exhibits a maximum on-resistance (Rds(on)) of 2 Ω at Vgs = 5 V and Id = 50 mA, with a gate threshold voltage (Vgs(th)) of 1.2 V max at Id = 250 µA. Maximum power dissipation is 150 mW at Ta = 25°C. It operates within a junction temperature range of -55°C to 150°C and is housed in an SOT-523 surface-mount package.

Feature Summary

  • Dual N-channel configuration for space-efficient circuit design
  • Logic-level gate drive capability with low threshold voltage
  • Ultra-small SOT-523 surface-mount package
  • Enhanced thermal performance within specified operating temperatures

Applications

  • Portable electronic devices requiring compact switching solutions
  • Battery-powered equipment utilizing low-voltage logic control
  • Signal routing and protection circuits in consumer electronics

Procurement Notes

Verify the Q suffix indicates automotive qualification standards per Diodes Incorporated documentation. Confirm the specific datasheet revision matches the required reliability specifications. Ensure the SOT-523 footprint aligns with the target PCB layout. Cross-reference the manufacturer's official ordering information to validate the complete part number before procurement.

Selection Notes

Select this component when a dual N-channel MOSFET is required in an ultra-small package. The 50 V rating suits low-voltage applications. Verify that the 2 Ω on-resistance meets the efficiency requirements at the intended operating current. Ensure the driving circuit can provide sufficient gate voltage to fully enhance the channels given the threshold specifications.

Part Context

This part belongs to the DMN series of dual N-channel MOSFETs from Diodes Incorporated. It shares functional similarities with other members like the DMN5L06TK-7 but differs in package type and channel count. The DMN5L06DMKQ-7 specifically targets applications needing two isolated N-channel switches in a minimal footprint, distinguishing it from single-channel or larger package variants within the same product family.

Replacement Considerations

The DMN5L06TK-7 is a single-channel alternative in the same package. For direct dual-channel replacement, verify pinout compatibility with other DMN5L06 variants. Check if the non-Q suffix parts meet the necessary environmental and reliability standards for the specific application context.

DMN5L06DMKQ-7DMN5L06DMKQ-7
$0.14
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