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Product Detailed Parameters
- Description：MOSFET 2N-CH 50V 0.305A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：50V
- Current - Continuous Drain (Id) @ 25°C：305mA
- Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 25V
- Power - Max：250mW
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The DMN5L06DWK-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDSS) of 50V and a continuous drain current (ID) of 305mA at 25°C. The device has a gate-source threshold voltage (VGS(TH)) of 1.0V maximum at 250µA. Static drain-source on-resistance (RDS(ON)) is specified as 2.0Ω at VGS=5.0V and ID=50mA, 2.5Ω at VGS=2.5V, and 3.0Ω at VGS=1.8V. Total power dissipation is 250mW at 25°C with a thermal resistance of 500°C/W. Operating temperature ranges from -65°C to +150°C.
Feature Summary
- Dual N-channel configuration in an ultra-small surface mount package
- Low on-resistance optimized for low gate drive voltages
- Very low gate threshold voltage for efficient logic-level switching
- ESD protection rated up to 2kV
Applications
- Battery-powered portable devices
- Power management circuits
- Signal switching applications
Procurement Notes
Verify the component datasheet revision number against the manufacturer's official documentation before integration. Confirm that the SOT363 package dimensions match the target PCB footprint requirements. Ensure design compliance with the stated absolute maximum ratings, particularly regarding thermal resistance and junction temperature limits during operation.
Selection Notes
Select this component for designs requiring a compact dual N-channel solution with low gate drive requirements. Evaluate the 250mW power dissipation limit relative to the expected load current and ambient temperature conditions. Consider the 50V breakdown voltage rating when designing for higher voltage environments.
Part Context
This part belongs to the DMN5L06 series of dual N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes the SOT363 case style, which provides a compact form factor suitable for space-constrained printed circuit board layouts. The device is designed for general-purpose switching and amplification tasks.
Replacement Considerations
The datasheet explicitly states that this part is not recommended for new designs and recommends using DMN61D9UDW as the replacement.
FAQ
What is the maximum gate-source voltage allowed?
The maximum gate-source voltage (VGSS) is ±20V.
Is the device qualified for automotive applications?
Yes, the device is qualified to AEC-Q101 standards for high reliability.
What is the typical input capacitance?
The typical input capacitance (Ciss) is 50pF at VDS=25V and VGS=0V.
