DMN5L06VA-7

$0.15

Description：MOSFET 2N-CH 50V 0.28A SOT563
Series：-

SKU:9634b7beb7f9 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 50V 0.28A SOT563
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：50V
Current - Continuous Drain (Id) @ 25°C：280mA
Rds On (Max) @ Id, Vgs：3Ohm @ 200mA, 2.7V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：50pF @ 25V
Power - Max：150mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：SOT-563
Grade：-
Qualification：-

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DMN5L06VA-7

Overview

The DMN5L06VA-7 is a dual N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 50 V and a continuous drain current of 280 mA at 25°C ambient temperature. The device operates within a junction temperature range of -55°C to +150°C with a total power dissipation of 150 mW. Electrical characteristics include a gate threshold voltage of up to 1.2 V at 250µA, an input capacitance of 50 pF, and a static drain-source on-resistance of 4 Ω at 50mA and 1.8V gate-source voltage.

Feature Summary

Dual N-channel MOSFET configuration
Low on-resistance
Very low gate threshold voltage
Fast switching speed

Applications

Battery protection circuits
Power management applications
General purpose switching

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging format as documented in the official datasheet. Confirm that the component meets RoHS compliance standards and lead-free design requirements specified by the manufacturer. Ensure procurement channels provide authentic parts from Diodes Incorporated or authorized distributors to guarantee electrical performance and reliability.

Selection Notes

Select this component for designs requiring a compact dual N-channel solution in an SOT-563 package. Consider the 50 V drain-source voltage rating and 280 mA continuous current capability for appropriate load handling. Evaluate the thermal resistance and power dissipation limits relative to the expected operating environment and PCB layout constraints.

Part Context

This part belongs to the DMN5L06 series of dual N-channel enhancement mode field effect transistors. It shares similar electrical specifications with the DMN5L06V variant but differs in marking codes and potentially internal configuration nuances defined by the manufacturer. Both variants utilize the SOT-563 surface mount package.