ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 50V 0.28A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：50V
- Current - Continuous Drain (Id) @ 25°C：280mA (Ta)
- Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 25V
- Power - Max：250mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
Download product information
Overview
The DMN5L06VK-13A is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 50V drain-source voltage rating and a continuous drain current of 305mA at 25°C. The device exhibits a low on-resistance of 2Ω at 50mA with a 5V gate drive, alongside a maximum gate threshold voltage of 1V. Designed for surface mount applications, it offers fast switching speeds and ultra-low leakage characteristics within a compact package suitable for portable electronics.
Feature Summary
- Dual N-channel configuration integrated into a single ultra-small surface mount package
- Low on-resistance with a maximum value of 2Ω under specified test conditions
- Very low gate threshold voltage enabling efficient logic-level driving
- Fast switching speed combined with low input/output leakage currents
Applications
- Battery-powered portable consumer devices
- Load switching in mobile communication equipment
- Power management circuits in handheld gadgets
- General purpose low-voltage switching applications
Procurement Notes
Verify the specific suffix 'A' against the official Diodes Incorporated datasheet to confirm pinout or electrical parameter variations compared to standard variants. Ensure RoHS compliance documentation matches current regulatory requirements for your target market. Confirm package dimensions match your PCB footprint design constraints before finalizing procurement.
Selection Notes
Select this component when a dual N-channel solution is required in a minimal footprint for low-current switching tasks. The 50V rating provides adequate headroom for 3.3V and 5V systems. Consider the 2Ω on-resistance for power loss calculations in battery-operated designs where efficiency is critical. Verify thermal performance within the intended enclosure environment.
Part Context
This part belongs to the DMN series of dual N-channel MOSFETs from Diodes Incorporated. These devices are engineered for high-density PCB layouts requiring multiple switching elements. The series emphasizes low cost and small size, making them ideal for space-constrained consumer electronics where board real estate is limited.
Replacement Considerations
Check for direct substitutes such as the DMN5L06DWK-7 which shares similar electrical specifications and package type. Verify that any replacement maintains the same dual N-channel configuration and voltage ratings to ensure circuit compatibility without redesign.
