DMN5L06VK-7-G

Description：MOSFET 2N-CH 50V 0.28A SOT563
Series：-

SKU:6a78d2c3cca6 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 50V 0.28A SOT563
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：50V
Current - Continuous Drain (Id) @ 25°C：280mA (Ta)
Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：50pF @ 25V
Power - Max：250mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：SOT-563
Grade：Automotive
Qualification：AEC-Q101

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DMN5L06VK-7-G

Overview

The DMN5L06VK-7-G is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of 50 V and a continuous drain current (I_D) of 280 mA at 25°C. The device offers a low gate threshold voltage with a maximum value of 1.0 V. Static drain-source on-resistance (R_DS(ON)) ranges from 2.0 Ω to 3.0 Ω depending on the gate-source voltage and drain current conditions. Total power dissipation is rated at 250 mW, with an operating temperature range spanning from -55°C to +150°C.

Feature Summary

Dual N-channel configuration in an ultra-small surface-mount package
Very low gate threshold voltage for efficient drive requirements
Low input capacitance supporting fast switching speeds
ESD protection up to 2 kV

Applications

Battery-powered portable devices
Consumer electronics load switching
General-purpose signal switching applications

Procurement Notes

Verify that the specific ordering suffix matches the required packing quantity and pin 1 indicator marking. Confirm compliance with RoHS and halogen-free standards if environmental regulations apply to the assembly process. Ensure the design accounts for the component's status as not recommended for new designs by consulting the manufacturer's latest recommendations.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage logic interfacing. Evaluate the thermal resistance and power dissipation limits relative to the expected ambient temperature and PCB copper area. Consider the low gate threshold voltage compatibility with standard logic levels while verifying the on-resistance meets the specific current handling requirements.

Part Context

This part belongs to the DMN5/L06VK family of dual N-channel enhancement mode MOSFETs. It utilizes a SOT563 package constructed with a molded plastic compound. The device is designed for high reliability and is qualified to JEDEC standards. It serves as a space-efficient alternative for single-channel applications requiring two switches within a minimal footprint.