DMN5L06VK-7A

Overview

The DMN5L06VK-7A is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (Vdss) of 50 V and a continuous drain current (Id) of 280 mA at 25°C ambient temperature. The device exhibits a maximum on-resistance (Rds(on)) of 2 Ω at Vgs = 5 V and Id = 50 mA, with a gate threshold voltage (Vgs(th)) of 1.2 V max at Id = 250 µA. Maximum power dissipation is 150 mW at Ta = 25°C. The component operates within a junction temperature range of -55°C to +150°C and is housed in an ultra-small SOT-523 surface-mount package.

Feature Summary

• Dual N-channel configuration integrating two independent transistors in a single compact package
• Low on-resistance optimized for low-voltage operation with a maximum of 2 ohms at 5V gate drive
• Very low gate threshold voltage enabling efficient switching from low logic levels
• Ultra-small SOT-523 surface mount package designed for space-constrained applications

Applications

• Battery protection circuits in portable devices
• Load switches for low-power consumer electronics
• Power management in mobile phones and tablets
• General purpose switching in battery-powered equipment

Procurement Notes

Verify the specific suffix '7A' against the manufacturer's official datasheet DS30930 to confirm exact binning or tape-and-reel specifications. Ensure the ordering part number matches the required packaging format. Cross-reference the date code and lot traceability with the supplier's certificate of conformity. Confirm RoHS compliance status as per the latest environmental declaration. Validate that the component meets AEC-Q101 reliability standards if automotive application is intended.

Selection Notes

Select this component when a dual N-channel solution is required in minimal board space. The 50V rating suits low-voltage systems such as single-cell lithium-ion batteries. The 280mA current limit defines its suitability for signal switching rather than high-power loads. Compare input capacitance values if high-speed switching performance is critical for the specific circuit topology.

Part Context

This device belongs to the DMN5L06 family of dual N-channel MOSFETs from Diodes Incorporated. It shares functional similarities with parts like DMN5L06TK-7 and DMN5L06DWK-7 but differs in package type and specific electrical parameter tolerances. The VK suffix typically denotes the SOT-523 package variant, distinguishing it from other form factors within the same electrical specification group.

Replacement Considerations

Direct substitutes include DMN5L06TK-7 and DMN5L06DWK-7 from Diodes Incorporated, provided package compatibility is verified. Other manufacturers offer pin-compatible alternatives such as FDS8926A or CEM2108, though parameter deviations must be assessed.