DMN6041SVTQ-7

$0.14

Description：MOSFET BVDSS: 41V~60V TSOT26 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:b0a85d2b9c92 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V TSOT26 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：4.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：48mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：21 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1190 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：900mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TSOT-26
Package / Case：SOT-23-6 Thin, TSOT-23-6

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DMN6041SVTQ-7

Overview

The DMN6041SVTQ is a 60V N-channel enhancement mode MOSFET designed for automotive applications. It features a maximum drain-source voltage of 60V and continuous drain currents of 4.1A at +25°C and 3.3A at +70°C. The device exhibits low on-resistance, with maximum values of 48mΩ at VGS=10V and 60mΩ at VGS=4.5V. It operates within a junction temperature range of -55°C to +150°C and is housed in a TSOT26 package.

Feature Summary

Qualified to AEC-Q101 standards and supported by PPAP for automotive use
Manufactured in IATF 16949 certified facilities
100% Unclamped Inductive Switch (UIS) tested in production
Totally lead-free and fully RoHS compliant

Applications

DC-DC converters
Power-management functions
Backlighting

Procurement Notes

Verify the specific ordering suffix (-7 or -13) against the required tape and reel quantity before procurement. Confirm that the component meets the necessary automotive quality standards, including AEC-Q101 qualification and PPAP support, as these are critical for the intended application environment.

Selection Notes

Select this component when a 60V N-channel MOSFET is required for automotive-grade reliability. Ensure the gate drive voltage aligns with the specified RDS(ON) performance thresholds. Consider the thermal resistance characteristics and package limitations when designing for high-current or high-temperature environments.

Part Context

This part belongs to Diodes Incorporated's lineup of automotive-qualified power semiconductors. It is specifically engineered to meet stringent industry requirements for durability and performance in vehicle electronics, distinguishing it from standard commercial-grade MOSFETs through its rigorous testing and manufacturing certifications.