DMN6066SSDQ-13

$0.37

Description：MOSFET 2N-CH 60V 3.3A 8SOP
Series：-

SKU:3e376f7c4fba Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 3.3A 8SOP
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：3.3A (Ta)
Rds On (Max) @ Id, Vgs：66mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：502pF @ 30V
Power - Max：1.25W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOP
Grade：Automotive
Qualification：AEC-Q101

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DMN6066SSDQ-13

Overview

The DMN6066SSDQ-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 60V and operates within a junction temperature range of -55°C to +150°C. The device provides a continuous drain current of 4.4A at 25°C, with an on-resistance of 66mΩ at VGS=10V and 97mΩ at VGS=4.5V. Packaged in an SO-8 surface-mount format, it supports a power dissipation of 1.25W and includes 100% UIS testing.

Feature Summary

Dual N-channel configuration designed for high-efficiency power management applications
Low on-state resistance combined with fast switching performance
Qualified to JEDEC standards for high reliability
Totally lead-free, fully RoHS compliant, and halogen/antimony free

Applications

Motor controls
Backlighting
DC-DC converters
Power-management functions

Procurement Notes

Verify the specific ordering suffix 'Q' against official documentation to confirm any automotive or specific manufacturing variations compared to the standard 'DMN6066SSD-13'. Ensure compliance with relevant environmental directives such as RoHS 2 and RoHS 3. Confirm package material specifications and moisture sensitivity levels prior to integration into assembly processes.

Selection Notes

Select this component for designs requiring a compact dual N-channel solution with low conduction losses. Evaluate thermal resistance values based on PCB copper coverage and airflow conditions. Consider the gate threshold voltage characteristics when interfacing with logic-level drivers. Verify that the required continuous and pulsed drain currents remain within the specified safe operating area limits.

Part Context

This part belongs to the DMN6066 series of dual N-channel MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in an SO-8 package. The series is engineered to minimize on-state resistance while maintaining superior switching capabilities, targeting efficiency improvements in various electronic systems.