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Product Detailed Parameters
- Description：MOSFET N-CH 60V 3.7A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：3.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：66mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：502 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：1.56W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The DMN6066SSS-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 60V and a continuous drain current of 5.0A at 25°C, reducing to 3.7A under derating conditions. The device exhibits a low on-resistance of 48mΩ at VGS=10V and 97mΩ at VGS=4.5V. Packaged in an SO-8 surface-mount case, it operates within a temperature range of -55°C to +150°C with a power dissipation of 1.56W.
Feature Summary
- Designed for high efficiency power management applications through minimized on-state resistance and superior switching performance.
- Qualified to AEC-Q101 standards for high reliability and capable of PPAP submission.
- Totally lead-free and fully RoHS compliant, containing no intentionally added lead.
- Halogen and antimony free, classified as a green device.
Applications
- Motor Control
- Backlighting
- DC-DC Converters
- Power Management Functions
Procurement Notes
Verify the specific ordering suffix when purchasing. The standard commercial version uses the suffix -13, while the automotive qualified version uses -Q-13. Both variants share identical electrical and thermal characteristics but differ in qualification standards. Confirm package type and compliance requirements against project specifications before finalizing orders.
Selection Notes
Select this component for circuits requiring a 60V N-channel MOSFET in an SO-8 package. Ensure gate drive voltages align with the specified RDS(on) thresholds of 10V or 4.5V. Consider the thermal derating curve for ambient temperatures exceeding 25°C. Verify that the application does not involve life support systems without explicit manufacturer approval.
Part Context
This part belongs to the DMN60 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a molded plastic SO-8 case with tin-finished annealed copper leadframes. The device is designed to balance low conduction losses with fast switching speeds for efficient power conversion.
Replacement Considerations
The DMN6066SSSQ-13 serves as the automotive-grade equivalent with identical electrical and thermal specifications. Verify pinout compatibility and package dimensions (SO-8) when substituting. No other direct substitutes are confirmed in the provided documentation.
FAQ
What is the difference between the DMN6066SSS-13 and DMN6066SSSQ-13?
The DMN6066SSSQ-13 is the automotive-grade variant qualified to AEC-Q101 standards and is PPAP capable. The DMN6066SSS-13 is the commercial grade. Electrically and thermally, they are identical.
Is the DMN6066SSS-13 suitable for life support devices?
No. Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without express written approval from the Chief Executive Officer.
