ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 2.7A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：2.7A (Ta)
- Rds On (Max) @ Id, Vgs：87mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：588pF @ 30V
- Power - Max：1.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：Automotive
- Qualification：AEC-Q101
Download product information
Overview
The DMN6070SSDQ-13 is a dual N-channel enhancement mode MOSFET with a 60V drain-source voltage rating. It features an on-resistance of 87mΩ at VGS=10V and 100mΩ at VGS=4.5V, supporting continuous currents up to 2.7A. The device operates within a temperature range of -55°C to +150°C and utilizes an SO-8 package.
Feature Summary
- Qualified for automotive applications under AEC-Q101 standards
- Capable of PPAP submission for specific change control requirements
- Manufactured in IATF 16949 certified facilities
- Includes 100% unclamped inductive switching (UIS) testing
Applications
- Backlighting circuits
- Power management functions
- DC-DC converters
Procurement Notes
Verify the component matches the exact Diodes Incorporated part number DMN6070SSDQ-13. Confirm that the supplier provides documentation proving AEC-Q101 qualification and PPAP capability. Ensure the package type is SO-8 and check for RoHS compliance markers. Validate manufacturing origin against IATF 16949 facility requirements specified by the manufacturer.
Selection Notes
Select this component when designing automotive-grade circuits requiring dual N-channel MOSFETs. It is suitable for applications needing low input capacitance and fast switching speeds. Consider its thermal resistance characteristics and power dissipation limits relative to the PCB layout. Verify gate threshold voltage compatibility with the intended drive logic levels.
Part Context
This part belongs to the DMN60 series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. It shares the SO-8 package form factor common to this family but offers specific electrical parameters tailored for automotive reliability. The 'Q' suffix indicates automotive qualification status.
Replacement Considerations
Check for other parts within the DMN60 series or similar automotive-qualified dual N-channel MOSFETs. Ensure any substitute maintains the same SO-8 footprint and meets AEC-Q101 standards if automotive use is required.
FAQ
Is the DMN6070SSDQ-13 qualified for automotive use?
Yes, it is qualified to AEC-Q101 and manufactured in IATF 16949 certified facilities.
What is the maximum continuous drain current?
The maximum continuous drain current is 2.7A at TA = +25°C.
Does the device support unclamped inductive switching?
Yes, the datasheet specifies 100% unclamped inductive switching (UIS) testing in production.
