DMN61D8LVTQ-7

Overview

The DMN61D8LVTQ-7 is a dual N-channel enhancement mode MOSFET integrated into an inductive load driver. It features a 60V drain-source voltage rating and a maximum continuous drain current of 630mA at +25°C. The device provides a low on-resistance of 1.8Ω at VGS=5V and 2.4Ω at VGS=3V. It includes an internal active clamp to handle inductive switching transients without external freewheeling diodes. Packaged in a TSOT26 surface-mount format, it operates within a temperature range of -55°C to +150°C.

Feature Summary

• Integrates dual N-channel MOSFETs with an internal active clamp circuit to eliminate the need for external flyback or Zener diodes.
• Accepts logic level inputs, allowing direct driving by microcontrollers, inverters, and standard logic gates.
• Designed as a single-component replacement for discrete relay driver circuits, reducing printed circuit board footprint.
• Qualified for automotive applications under AEC-Q101 standards and manufactured in IATF 16949 certified facilities.

Applications

• Automotive door lock actuators
• Window lift motor control
• Antenna relay coils
• Small DC motor switching

Procurement Notes

Verify component authenticity through authorized Diodes Incorporated distribution channels. Confirm that the specific ordering suffix matches the required tape and reel quantity. Ensure design compliance with automotive quality standards if deployed in vehicle systems. Review the datasheet for thermal derating requirements relative to ambient operating conditions.

Selection Notes

Select this component when space constraints require replacing multiple discrete components with a single integrated solution. It is suitable for low-current inductive loads requiring logic-level interface compatibility. Evaluate the internal clamping capabilities against the specific inductive kickback voltages generated by the target load. Consider the TSOT26 package dimensions for PCB layout optimization.

Part Context

This part belongs to the DMN61 series of integrated load drivers from Diodes Incorporated. It is specifically engineered for automotive environments where robustness against electrical transients is critical. The integration of gate biasing and clamping functions simplifies the bill of materials for relay and solenoid control circuits.

Replacement Considerations

The datasheet explicitly states that the DMN61D8LVTQ is not recommended for new designs. Engineers should consult Diodes Incorporated for updated alternatives or next-generation replacements before finalizing any new product development.

FAQ

Does the DMN61D8LVTQ require an external freewheeling diode?

No, the device incorporates an internal active clamp circuit that manages inductive switching transients, removing the necessity for external flyback diodes.

What is the maximum gate-source voltage rating?

The absolute maximum rating for the gate-source voltage (VGSS) is ±12V.

Is this component qualified for automotive use?

Yes, the DMN61D8LVTQ is AEC-Q101 qualified and PPAP capable, designed for automotive applications requiring specific change control.