DMN61D9UDW-13

Overview

The DMN61D9UDW-13 is a dual N-channel enhancement mode MOSFET array manufactured by Diodes Incorporated. It features a 60V drain-source voltage rating and a continuous drain current of 350mA at 25°C. The device exhibits a maximum on-resistance of 2 ohms at 5V gate drive and 50mA drain current. Key electrical characteristics include a gate charge of 0.4nC and an input capacitance of 28.5pF. It operates within a junction temperature range of -55°C to 150°C with a maximum power dissipation of 320mW. The component is housed in a surface-mount SOT-363 package.

Feature Summary

• Integrates two independent N-channel MOSFETs into a single compact surface-mount package for space-constrained designs.
• Provides automotive-grade reliability through AEC-Q101 qualification for robust performance in demanding environments.
• Features low gate charge and input capacitance to support efficient switching operations in portable applications.

Applications

• Battery protection circuits in mobile devices
• Load switching in portable consumer electronics
• General-purpose switching in automotive systems

Procurement Notes

Verify the specific suffix against official Diodes Incorporated documentation to confirm package type, tape-and-reel quantity, and automotive grade status. Ensure the ordering part number matches the required pinout and thermal specifications for your PCB layout. Cross-reference datasheet revisions to confirm compliance with current RoHS and REACH standards before finalizing procurement.

Selection Notes

Select this component when a dual N-channel configuration is required in a minimal footprint. The 60V rating suits low-voltage battery systems, while the 2-ohm on-resistance is suitable for moderate current loads up to 350mA. Consider the SOT-363 package dimensions for board space optimization and verify thermal management requirements given the 320mW power dissipation limit.

Part Context

This device belongs to the DMN61 series of dual MOSFET arrays from Diodes Incorporated. It is designed as a compact solution for replacing discrete transistor pairs in modern electronic equipment. The SOT-363 packaging allows for high-density assembly, making it a standard choice for integrating multiple switching functions into small form-factor designs.

Replacement Considerations

DMN61D9UDWQ-13 is a verified equivalent variant offering identical electrical characteristics and pinout compatibility within the same series family.

FAQ

Is the DMN61D9UDW-13 qualified for automotive applications?

Yes, the component is AEC-Q101 qualified, indicating it meets the reliability standards required for automotive electronic systems.

What is the maximum gate-source voltage rating?

The absolute maximum gate-source voltage rating is ±20V, which defines the safe operating limit for the gate terminal.

How many channels are integrated in this package?

The device integrates two independent N-channel MOSFETs within a single SOT-363 package.