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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.318A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：318mA (Ta)
- Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：39pF @ 30V
- Power - Max：370mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMN61D9UDWQ-7 is a dual N-channel enhancement mode MOSFET designed for automotive applications. It features a 60V drain-source voltage and a maximum continuous drain current of 318mA at +25°C. The device offers low on-resistance, with a maximum of 2Ω at VGS = 5.0V. It operates within a temperature range of -55°C to +150°C and is housed in an ultra-small SOT-363 surface-mount package.
Feature Summary
- Dual N-channel configuration integrated into a single ultra-small SOT-363 package
- Qualified to AEC-Q101 standards with PPAP capability for automotive use
- Low gate threshold voltage and low input capacitance for fast switching
- Totally lead-free, fully RoHS compliant, and halogen/antimony free
Applications
- Motor control circuits
- Power management functions
Procurement Notes
Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging quantity and reel specifications. Ensure that the selected variant meets all required automotive qualification standards, including IATF 16949 manufacturing certification and PPAP requirements, before finalizing procurement decisions.
Selection Notes
Select this component when designing for space-constrained automotive environments requiring dual N-channel switching. Consider the thermal resistance characteristics and power dissipation limits relative to the intended PCB copper area. Verify that the gate drive voltage aligns with the specified thresholds for optimal on-resistance performance.
Part Context
This part belongs to the DMN61 series of dual N-channel MOSFETs manufactured by Diodes Incorporated. It is specifically engineered to meet stringent automotive reliability standards. The device utilizes silicon technology and is packaged in a molded plastic SOT-363 case with matte tin finish terminals.
Replacement Considerations
DMN61D9UDWQ-13
FAQ
Is the DMN61D9UDWQ-7 suitable for high-reliability automotive applications?
Yes, it is qualified to AEC-Q101, supported by PPAP, and manufactured in IATF 16949 certified facilities.
What is the maximum continuous drain current at +25°C?
The maximum continuous drain current is 318mA at TA = +25°C.
Does the device include internal protection features?
Yes, the datasheet indicates the presence of internal gate protection diodes for each channel.
