DMN62D0UDW-13

Overview

The DMN62D0UDW-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a gate-source voltage (VGSS) rating of ±20V. The device offers a maximum static drain-source on-resistance (RDS(on)) of 2.0Ω at VGS = 4.5V and 2.5Ω at VGS = 2.5V. Continuous drain current (ID) is rated at 350mA at +25°C and 290mA at +70°C. Total power dissipation (PD) reaches 320mW on FR-4 PCB with minimum pad layout, or 410mW on high copper coverage boards. Operating temperature range spans from -55°C to +150°C.

Feature Summary

• Dual N-channel configuration in an ultra-small SOT363 surface mount package
• Low on-resistance optimized for high-efficiency power management applications
• Fast switching speed combined with low input capacitance and leakage
• ESD protected gates with fully lead-free and RoHS compliant construction

Applications

• Motor control circuits
• Power management functions
• General purpose switching applications

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging format. Confirm that the standard case material meets UL flammability classification 94V-0 requirements for your assembly process. Ensure compatibility with J-STD-020 moisture sensitivity level 1 handling procedures during storage and reflow soldering.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage switching tasks. The SOT363 package provides space savings compared to larger transistor packages. Evaluate thermal resistance parameters against your PCB copper area to ensure junction temperatures remain within the specified operating range under continuous load conditions.

Part Context

This part belongs to the DMN62D0U series of dual N-channel MOSFETs designed for portable and battery-powered electronics. It serves as a complementary switch pair within a single footprint, reducing board space and simplifying bill of materials. The device utilizes silicon technology and is intended for general-purpose commercial applications rather than automotive-grade environments.

Replacement Considerations

For automotive applications requiring specific change control, refer to the related automotive grade part with the Q-suffix designation. Verify pinout compatibility if substituting with other dual N-channel devices in the SOT363 package.

FAQ

What is the maximum continuous drain current at elevated temperatures?

The continuous drain current decreases to 290mA when the ambient temperature reaches +70°C.

How does the package affect thermal performance?

Total power dissipation is rated at 320mW on FR-4 PCB with minimum recommended pad layout, and increases to 410mW on a 1” x 1” FR-4 PCB with high coverage 2oz copper.

Is the device suitable for high-reliability industrial use?

Yes, the part is qualified to JEDEC standards for high reliability, though it is not explicitly designated for automotive AEC-Q qualification without the Q-suffix.