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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.18A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：180mA
- Rds On (Max) @ Id, Vgs：6Ohm @ 115mA, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.87nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：22pF @ 25V
- Power - Max：300mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The DMN65D8LDW-7 is a dual N-channel enhancement mode MOSFET in an SOT363 package. It features a drain-source voltage of 60V and a gate-source voltage of ±20V. The on-resistance is 8Ω max at VGS=5V and 6Ω max at VGS=10V, both at ID=115mA. Continuous drain current reaches 170mA at VGS=5V and 200mA at VGS=10V (TA=+25°C). Total power dissipation is 300mW or 400mW depending on board layout. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration with low on-resistance for high-efficiency power management
- Low gate threshold voltage enabling logic-level drive compatibility
- Fast switching speed supported by low input capacitance
- ESD protected gate structure rated at 1kV (HBM)
Applications
- DC-DC Converters
- Power Management Functions
- Battery Operated Systems
- Solid-State Relays
- Drivers for relays, solenoids, lamps, displays, and memories
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the standard 3,000 units per tape and reel packaging format. Confirm that the component meets RoHS 3 and halogen-free requirements if environmental compliance is mandatory for the target assembly process. Ensure the design accommodates the specified thermal resistance values based on the actual PCB copper pad layout used.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage applications. The device offers a balance between low on-resistance and fast switching performance. Consider the SOT363 footprint constraints and verify that the 60V breakdown voltage provides adequate margin for the specific circuit operating conditions.
Part Context
This part belongs to the DMN65D8LDW series manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a standard SOT363 surface-mount case. The product is designed to minimize on-state resistance while maintaining superior switching characteristics suitable for portable and battery-operated electronic systems.
Replacement Considerations
The automotive-compliant variant DMN65D8LDWQ serves as a qualified alternative for automotive applications requiring AEC-Q100/101/200 standards and PPAP capability. Verify pinout compatibility and electrical parameter alignment before substituting.
