DMN67D8LDW-13

Overview

The DMN67D8LDW-13 is a dual N-channel enhancement mode MOSFET in an SOT363 package. It features a 60V drain-source breakdown voltage and a maximum continuous drain current of 230mA at +25°C. The on-resistance is specified as 5.0Ω max at VGS=10V and 7.5Ω max at VGS=5V. Key electrical parameters include a gate threshold voltage range of 1.0V to 2.5V, input capacitance of 22pF, and total gate charge of 361pC at VGS=4.5V. The device operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• Dual N-channel configuration for space-efficient power management
• Optimized low on-state resistance with superior switching performance
• Qualified to AEC-Q101 standards for high reliability applications
• Ultra-small surface mount package design

Applications

• Motor Control
• Power Management Functions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging format when placing orders. Confirm that the component meets RoHS 2 and halogen-free requirements if environmental compliance is mandatory for the assembly process. Ensure the SOT363 footprint matches the suggested pad layout provided in the manufacturer's application notes to guarantee proper soldering and thermal performance.

Selection Notes

Select this component for designs requiring a compact dual MOSFET solution with moderate current handling capabilities. The low gate threshold voltage makes it suitable for logic-level control interfaces. Consider the thermal resistance characteristics when designing for high ambient temperatures or limited PCB copper area. Verify that the 60V rating provides sufficient margin for the specific circuit voltage levels.

Part Context

This part belongs to Diodes Incorporated's DMN series of dual N-channel enhancement mode MOSFETs. These devices are engineered to minimize on-state resistance while maintaining fast switching speeds. The series targets high-efficiency power management applications where board space is constrained. The DMN67D8LDW variant specifically offers a balance of voltage rating and current capacity in the SOT363 package.

Replacement Considerations

The datasheet lists DMN67D8LDW-7 as an alternative packaging option for the same electrical specifications. No other direct substitute part numbers are explicitly confirmed in the provided documentation. Verify pinout compatibility and electrical ratings before substituting with components from other manufacturers.

FAQ

What is the maximum continuous drain current for the DMN67D8LDW?

The maximum continuous drain current is 230mA at a case temperature of +25°C and 180mA at +70°C.

Is the DMN67D8LDW qualified for automotive applications?

Yes, the device is qualified to AEC-Q101 standards for high reliability.

What is the typical input capacitance of this MOSFET?

The typical input capacitance (Ciss) is 22pF, measured at VDS=25V, VGS=0V, and f=1.0MHz.