DMNH4011SK3Q-13

$1.20

Description：MOSFET N-CH 40V 50A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:bc73404b1cdb Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 50A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：10mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：25.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1405 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.6W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252-3
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMNH4011SK3Q-13

Overview

The DMNH4011SK3Q-13 is a surface-mount N-channel enhancement mode MOSFET in a TO-252 package. It features a drain-source voltage of 40V and a continuous drain current of 50A at TC=+25°C. The maximum on-resistance is 10mΩ at VGS=10V and ID=50A. Total power dissipation is 2.6W at TA=+25°C, with a junction-to-case thermal resistance of 3°C/W. Operating temperature ranges from -55°C to +175°C.

Feature Summary

Qualified to AEC-Q101 standards for automotive reliability
Rated for operation up to +175°C junction temperature
100% unclamped inductive switching tested
Lead-free finish and RoHS compliant

Applications

DC-DC converters
Power management functions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2,500 units per reel. Confirm that the component meets PPAP requirements if mandated by the target automotive assembly specifications. Ensure the procurement channel provides traceability documentation consistent with Diodes Incorporated quality standards.

Selection Notes

Select this component for high-reliability automotive circuits requiring robust performance under elevated ambient temperatures. The low on-resistance supports efficient power conversion, while the wide operating temperature range ensures stability in demanding environments. Verify gate drive compatibility with the specified threshold voltage characteristics.

Part Context

This device belongs to the DMNH series of N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes advanced silicon technology optimized for automotive applications. The product is housed in a TO-252 case with a molded plastic compound rated UL 94V-0 flammability.

Replacement Considerations

Consult official Diodes Incorporated documentation for verified substitute part numbers. Do not assume functional equivalence based solely on similar electrical ratings without cross-referencing pinouts and thermal characteristics.