DMNH6065SPDWQ-13

$0.37

Description：MOSFET 2N-CH 60V 27A PWRDI50
Series：-

SKU:74958e052d1d Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 27A PWRDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：27A (Tc)
Rds On (Max) @ Id, Vgs：65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：9.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：466pF @ 25V
Power - Max：2.4W (Ta), 68W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount, Wettable Flank
Package / Case：8-PowerTDFN
Supplier Device Package：PowerDI5060-8 (Type R)
Grade：Automotive
Qualification：AEC-Q101

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DMNH6065SPDWQ-13

Overview

The DMNH6065SPDWQ-13 is a dual N-channel enhancement mode MOSFET designed for automotive applications. It features a 60V drain-source voltage rating and operates up to +175°C junction temperature. The device offers a maximum on-resistance of 65mΩ at VGS=10V and 24A continuous drain current. Packaged in PowerDI5060-8, it supports AEC-Q101 qualification and PPAP requirements.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Wettable flank design enables improved optical inspections during manufacturing
Qualified to AEC-Q101 standards with PPAP capability for automotive use
Manufactured in IATF 16949 certified facilities

Applications

Automotive backlighting systems
DC-DC converters
Power management functions

Procurement Notes

Verify the specific ordering suffix matches the required packing quantity and carrier type. Confirm that the component meets all applicable RoHS directives and halogen-free definitions relevant to your project specifications. Ensure the manufacturer's marking codes align with your assembly tracking requirements.

Selection Notes

Select this component when designing circuits requiring dual N-channel MOSFETs with high thermal stability. Consider its low input capacitance for switching efficiency. Evaluate the package dimensions against available PCB real estate constraints. Verify gate threshold voltage compatibility with your control logic levels.

Part Context

This part belongs to Diodes Incorporated's DMNH series of automotive-grade MOSFETs. It utilizes the PowerDI5060-8 package to provide robust performance in space-constrained designs. The series is engineered to meet stringent automotive reliability standards while maintaining competitive electrical characteristics.