DMP1022UWS-13

$0.23

Description：MOSFET P-CH 12V 7.2A 8DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:7e375bcd044c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 12V 7.2A 8DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：18mOhm @ 9A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30 nC @ 5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：2847 pF @ 4 V
FET Feature：-
Power Dissipation (Max)：900mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：V-DFN3020-8
Package / Case：8-VDFN

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DMP1022UWS-13

Overview

The DMP1022UWS-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a V-DFN3020-8 package and operates with a drain-source voltage of -12V. The device provides a continuous drain current of -7.2A at +25°C, with a maximum on-resistance of 18mΩ at VGS = -4.5V. It includes an ESD protected gate and supports a junction temperature range from -55°C to +150°C.

Feature Summary

Low on-resistance for high efficiency power management
Fast switching speed with low input capacitance
ESD protected gate structure
Totally lead-free and fully RoHS compliant

Applications

Power management functions
High efficiency power management applications

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10000-unit tape and reel packaging configuration. Confirm that the component meets the required environmental standards, including being halogen and antimony free. Ensure the procurement channel is authorized to avoid counterfeit risks associated with unauthorized sales channels.

Selection Notes

Select this component when a compact surface-mount solution is required for low-voltage power switching. The V-DFN3020-8 package offers thermal performance suitable for applications requiring efficient heat dissipation. Consider the -12V rating and 18mΩ on-resistance characteristics to ensure compatibility with the target circuit's voltage and current requirements.

Part Context

This part belongs to the DMP series of P-channel MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The product is classified as a new product in the manufacturer's documentation dated July 2018.

Replacement Considerations

The datasheet lists DMP1022UWS-7 as an alternative packaging option within the same product family. No other cross-model substitutes are documented in the provided source material.