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The DMP10H4D2SQ-13 is a single-channel P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -100V drain-source breakdown voltage and a continuous drain current of -0.27A at +25°C. The device exhibits a maximum on-resistance of 4.2Ω at VGS = -10V and 5.0Ω at VGS = -4.0V. Packaged in an SOT-23 surface-mount format, it operates within a temperature range of -55°C to +150°C with a total power dissipation of 0.44W.
Verify the specific ordering suffix '-13' corresponds to the required tape and reel quantity of 10,000 units. Confirm that the component meets the necessary AEC-Q101 qualification requirements for your target application. Ensure compatibility with IATF 16949 certified manufacturing processes if automotive change control protocols are mandated. Validate package dimensions against your PCB footprint design.
Select this component when a compact P-channel switch is required for 100V circuits. The SOT-23 package suits space-constrained designs. Consider the 4.2Ω on-resistance for efficiency calculations at standard logic levels. Verify thermal management capabilities given the 0.44W power dissipation limit in the specified package.
This part belongs to the DMP10 series of P-channel MOSFETs from Diodes Incorporated. It shares the same electrical characteristics as the DMP10H4D2S but includes the 'SQ' designation indicating AEC-Q101 automotive qualification. The suffix '-13' specifies the packaging configuration compared to other available reel sizes.
The DMP10H4D2S-7 serves as a non-automotive equivalent with identical electrical specifications but differs in packaging quantity and lack of automotive qualification.