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Product Detailed Parameters
- Description：MOSFET P-CH 20V 18A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：18A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
- Rds On (Max) @ Id, Vgs：5.5mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：85 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：4621 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：2.3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMP2007UFG-7 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a POWERDI3333-8 surface-mount package. It features a drain-source voltage of -20V and a continuous drain current of -40A at case temperature of +25°C. The device offers low on-state resistance, specified as 5.5mΩ maximum at VGS=-10V, 7.0mΩ at VGS=-4.5V, and 9.0mΩ at VGS=-2.5V. Total gate charge is 85nC at VGS=-10V. Operating junction temperature ranges from -55°C to +150°C.
Feature Summary
- Low RDS(ON) ensures minimized on-state losses across various drive voltages
- Small form factor thermally efficient package enables higher density end products
- Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
- Totally Lead-Free & Fully RoHS Compliant
Applications
- Load Switch
- Power Management Functions
Procurement Notes
Verify the specific ordering suffix when purchasing. The DMP2007UFG-7 variant comes in a tape and reel packaging format with a quantity of 2,000 units per reel. Confirm that the required component matches this exact suffix to ensure correct packaging and handling specifications for automated assembly processes.
Selection Notes
Select this component for high-efficiency power management applications requiring compact size and superior switching performance. The device is suitable for designs needing low on-state resistance to minimize conduction losses while maintaining a small footprint. Ensure the application operates within the specified thermal and electrical limits defined in the datasheet.
Part Context
This part belongs to the DMP series of P-channel MOSFETs manufactured by Diodes Incorporated under the POWERDI trademark. It utilizes silicon technology and is designed for surface mount installation. The component is classified as a single channel transistor intended for general-purpose power switching tasks in electronic circuits.
Replacement Considerations
Consult official manufacturer documentation for confirmed substitute part numbers. Verify compatibility regarding pinout, package dimensions, and electrical ratings before implementing any alternative components in existing designs.
