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Product Detailed Parameters
- Description：MOSFET P-CH 20V 7.6A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：7.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：27mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：27 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：1837 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：730mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMP2023UFDF-7 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a U-DFN2020-6 (Type F) package. It features a drain-source voltage of -20V and a maximum continuous drain current of -7.6A at +25°C. The device offers low on-state resistance, specified as 27mΩ at VGS = -4.5V and 32mΩ at VGS = -2.5V. Designed for high-efficiency power management, it includes an ESD-protected gate and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Low profile construction with a maximum height of 0.6mm
- Optimized for fast switching performance and low on-state losses
- Totally lead-free and fully RoHS compliant
- Halogen and antimony free "Green" device
Applications
- Battery management systems
- Power management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details. The standard reel size is 3 inches with a packing quantity of 3,000 units per carrier. Confirm compliance requirements such as RoHS and Halogen-free status directly with the manufacturer or authorized distributors before procurement.
Selection Notes
Select this component for applications requiring a compact footprint and efficient power handling. Ensure the gate drive voltage meets the threshold requirements for optimal RDS(ON). Evaluate thermal dissipation capabilities based on the PCB copper area and ambient operating conditions to maintain safe junction temperatures.
Part Context
This part belongs to the DMP series of P-channel MOSFETs manufactured by Diodes Incorporated. It utilizes a U-DFN2020-6 surface-mount package designed for space-constrained designs. The device is intended for general-purpose switching and power management tasks where low profile and high efficiency are prioritized.
Replacement Considerations
Consult official substitution lists for verified alternatives. Cross-reference pinouts, electrical ratings, and package dimensions when considering equivalent components from other manufacturers.
