DMP2024UFDF-7

$0.12

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:53ecd7a092bf Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：27mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：21.7 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：2007 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.52W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

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DMP2024UFDF-7

Overview

The DMP2024UFDF-7 is a surface-mount P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -20V drain-source breakdown voltage and a maximum continuous drain current of -7.2A at +25°C ambient temperature. The device offers a low on-state resistance of 27mΩ at VGS = -4.5V and 32mΩ at VGS = -2.5V. Total power dissipation reaches 1.52W with a thermal resistance of 80.9°C/W under standard conditions. It operates within a junction temperature range of -55°C to +150°C and utilizes a U-DFN2020-6 (Type F) package.

Feature Summary

Optimized for high-efficiency power management applications through minimized on-state resistance while maintaining superior switching performance.
Features a low profile design with a 0.6mm height, making it suitable for space-constrained electronic assemblies.
Utilizes a compact PCB footprint of 4mm² to reduce board space requirements.
Incorporates a low gate threshold voltage and fast switching speed characteristics.

Applications

Battery management systems
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. The -7 suffix indicates a reel size of 4F inches with a packing quantity of 3,000 units per carrier. Confirm that the required component meets all applicable automotive or industrial reliability standards if intended for such environments, as standard versions may differ from qualified variants.

Selection Notes

Select this component when a low-profile P-channel MOSFET is required for efficient power switching in compact designs. Ensure the application voltage does not exceed the -20V rating and that the gate drive voltage aligns with the specified thresholds for optimal on-resistance. Consider the thermal resistance values when designing heat dissipation strategies for continuous operation.

Part Context

This part belongs to the DMP series of P-channel enhancement mode MOSFETs produced by Diodes Incorporated. It is designed to minimize conduction losses while supporting rapid switching transitions. The device is housed in a lead-free, RoHS-compliant U-DFN2020-6 package, utilizing a nickel-palladium-gold terminal finish over a copper leadframe for solderability.

Replacement Considerations

Consult official manufacturer substitution guides for verified alternatives. Cross-referencing parameters such as voltage ratings, current capabilities, and package dimensions is essential when evaluating potential replacement components for this specific part number.