DMP2040UVT-13

$0.09

Description：MOSFET P-CH 20V TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:9ad44ca71645 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：5.5A (Ta), 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：38mOhm @ 8.9A, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.6 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：834 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1.2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TSOT-26
Package / Case：SOT-23-6 Thin, TSOT-23-6

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DMP2040UVT-13

Overview

The DMP2040UVT-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of -20V and a maximum continuous drain current (ID) of -5.5A at +25°C. The device exhibits a low on-state resistance (RDS(ON)) of 38mΩ at VGS = -4.5V and 52mΩ at VGS = -2.5V. Packaged in a TSOT26 case, it supports an operating temperature range from -55°C to +150°C.

Feature Summary

Designed for high-efficiency power management applications with minimized on-state resistance.
Provides superior switching performance combined with low input capacitance.
Compliant with RoHS directives and fully lead-free, halogen-free, and antimony-free.

Applications

DC-DC Converters
Motor Control
Power Management Functions
Analog Switch

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000 units per tape and reel packaging configuration. Confirm that the component meets the required environmental standards, specifically the 'Green' device definition regarding bromine, chlorine, and antimony content limits. Ensure the application design accounts for the thermal resistance characteristics provided in the datasheet.

Selection Notes

Select this component when a compact P-channel MOSFET with a -20V rating is required. The TSOT26 package offers a small footprint suitable for space-constrained designs. Evaluate the RDS(ON) specifications against the system's gate drive voltage levels, as resistance varies significantly between -2.5V and -4.5V gate-source voltages.

Part Context

This part belongs to the DMP series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes a silicon-based technology optimized for power switching applications. The device is designed to balance low conduction losses with fast switching speeds, making it suitable for modern electronic systems requiring efficient power regulation.

Replacement Considerations

Consult the manufacturer's documentation for verified substitute part numbers. Cross-reference electrical parameters such as BVDSS, ID, and RDS(ON) to ensure compatibility with existing circuit designs.