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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 3A 9UWLB
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual) Common Source
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：3A
- Rds On (Max) @ Id, Vgs：100mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id：900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：310pF @ 10V
- Power - Max：800mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：9-UFBGA, WLBGA
- Supplier Device Package：U-WLB1515-9
- Grade：-
- Qualification：-
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Overview
The DMP2100UCB9-7 is a dual P-channel enhancement mode MOSFET designed for high-efficiency power management. It features an 80mΩ typical on-state resistance at VGS = -4.5V and supports a continuous drain current of -4A. The device utilizes LD-MOS technology to minimize on-state losses while maintaining ultra-fast switching performance with a total gate charge of 3.3nC. It operates within a junction temperature range of -55°C to +150°C and includes 3kV HBM ESD protection.
Feature Summary
- LD-MOS technology minimizes on-state resistance and enables ultra-fast switching
- Low gate threshold voltage facilitates low turn-on potential
- High reliability qualification for automotive applications
- Integrated electrostatic discharge protection
Applications
- Battery Management Systems
- Load Switching Circuits
- Battery Protection Modules
Procurement Notes
Verify the component against the official Diodes Incorporated datasheet DS35725 Rev. 5-2 to confirm authenticity. Ensure the package matches the U-WLB1515-9 specification. Confirm compliance with RoHS directives and AEC-Q101 standards as documented in the manufacturer's release notes.
Selection Notes
Select this component for applications requiring compact dual P-channel configurations. The low profile height and small footprint suit space-constrained designs. Evaluate thermal requirements based on the specific PCB copper area, as power dissipation varies significantly between minimum pad layouts and larger ground planes.
Part Context
This part belongs to the DMP series of dual P-channel MOSFETs from Diodes Incorporated. It is packaged in the U-WLB1515-9 case, which measures 1.5mm by 1.5mm. The device is supplied in tape and reel packaging for automated surface-mount assembly processes.
Replacement Considerations
Consult the manufacturer's documentation for qualified alternatives. Verify that any substitute maintains the same voltage ratings, current capabilities, and package dimensions to ensure mechanical and electrical compatibility.
FAQ
What is the maximum pulsed drain current?
The maximum pulsed drain current is -28A with a pulse duration of 10μs and a duty cycle of 1% or less.
Does the device support automotive applications?
Yes, the DMP2100UCB9 is qualified to AEC-Q101 standards for high reliability.
What is the typical gate threshold voltage?
The typical gate threshold voltage is -0.7V at a drain-source voltage equal to the gate-source voltage with a drain current of -250μA.
