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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 5.7A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual) Common Drain
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：5.7A
- Rds On (Max) @ Id, Vgs：38mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：21.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：906pF @ 10V
- Power - Max：900mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UFDFN Exposed Pad
- Supplier Device Package：U-DFN2030-6 (Type B)
- Grade：-
- Qualification：-
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Overview
The DMP2100UFU-7 is a dual P-channel enhancement mode MOSFET in a U-DFN2030-6 package. It features a -20V drain-source voltage rating and low on-resistance of 38mΩ at VGS=-10V, supporting up to -5.7A continuous current. The device includes integrated gate protection diodes for both channels. Key electrical parameters include a gate threshold voltage range of -0.3V to -1.4V and total power dissipation of 0.9W at +25°C. Operating temperature spans from -55°C to +150°C.
Feature Summary
- Dual channel configuration with independent gate protection diodes
- Optimized for high efficiency power management applications
- Totally lead-free and fully RoHS compliant construction
Applications
- Power Management Functions
- Battery Pack Protection
- Load Switching Circuits
Procurement Notes
Verify the specific ordering suffix (-7 or -13) against the required tape and reel quantity before procurement. Confirm that the U-DFN2030-6 package dimensions align with the target PCB footprint layout. Ensure storage conditions comply with moisture sensitivity level 1 requirements per J-STD-020 standards prior to soldering.
Selection Notes
Select this component when a compact dual P-channel solution is required for space-constrained designs. The low on-resistance characteristics make it suitable for minimizing conduction losses in battery-powered systems. Verify that the -20V voltage rating provides sufficient headroom for the specific application supply rails.
Part Context
This part belongs to Diodes Incorporated's DMP21 series of dual P-channel MOSFETs. It utilizes a U-DFN2030-6 case style designed for surface mount assembly. The device represents a newer generation optimized for superior switching performance compared to previous iterations in the family.
Replacement Considerations
Direct substitutes within the same manufacturer family include the DMP2100UFU-13 variant, which differs only in packaging quantity (10,000 units per reel versus 3,000 units). Cross-manufacturer replacements require matching the dual-channel topology, -20V rating, and U-DFN2030-6 package outline.
FAQ
What is the maximum continuous drain current for each channel?
Each channel supports a maximum continuous drain current of -5.7A at an ambient temperature of +25°C.
Does the device include internal protection features?
Yes, the datasheet specifies that both channels are equipped with integrated gate protection diodes.
What is the thermal resistance junction-to-ambient?
The thermal resistance junction-to-ambient is 138°C/W under steady-state conditions on an FR-4 substrate with minimum recommended pad layout.
