DMP2108UCB6-7

DMP2108UCB6-7

  • Description:MOSFET 2P-CH 20V 2.25A 6UWLB
  • Series:-

SKU:576a24125e81 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2P-CH 20V 2.25A 6UWLB
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:2.25A
  • Rds On (Max) @ Id, Vgs:55mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id:1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:2.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:269pF @ 10V
  • Power - Max:840mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-UFBGA, WLBGA
  • Supplier Device Package:U-WLB1510-6
  • Grade:-
  • Qualification:-

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DMP2108UCB6-7

Overview

The DMP2108UCB6-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the company's LD-MOS technology to achieve low on-resistance and fast switching speeds. The device is housed in a U-WLB1515-9 chip-scale package, which provides high power density through low thermal resistance and minimal footprint.

Feature Summary

  • P-channel enhancement mode operation
  • LD-MOS technology for optimized performance
  • Chip-scale packaging for space efficiency

Applications

  • Power management circuits
  • Load switches
  • DC-DC converters

Procurement Notes

Verify the specific suffix 'UCB6-7' against the manufacturer's current datasheet to confirm pinout and electrical characteristics. Ensure the component meets RoHS compliance requirements for your target market. Cross-reference the package marking with official images to prevent counterfeit substitution during assembly.

Selection Notes

Select this component when a compact P-channel solution is required for low-voltage applications. The U-WLB1515-9 package is suitable for designs with strict board space constraints. Evaluate thermal performance based on the specific PCB copper area available for heat dissipation under load conditions.

Part Context

This part belongs to Diodes Incorporated's portfolio of LD-MOS transistors designed for efficient power handling. The family emphasizes miniaturization while maintaining robust electrical performance. It serves as a modern alternative to traditional surface-mount packages in portable and industrial electronics.

Replacement Considerations

Check for direct substitutes within the DMP series that share the same package and voltage ratings. Verify compatibility with existing gate drive voltages before swapping components.

DMP2108UCB6-7DMP2108UCB6-7

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