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Product Detailed Parameters
- Description：MOSFET P-CH 20V 3.7A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：3.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：80mOhm @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6 nC @ 4.5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：443 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TSOT-26
- Package / Case：SOT-23-6 Thin, TSOT-23-6
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Overview
The DMP2109UVT-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -20V drain-source breakdown voltage and low on-resistance of 80mΩ at VGS=-4.5V and 110mΩ at VGS=-2.5V. The device supports continuous drain currents of -3.7A at +25°C (VGS=-4.5V) and -3.1A at +25°C (VGS=-2.5V). Packaged in a TSOT26 case, it offers superior switching performance with low input capacitance and gate threshold voltage.
Feature Summary
- Low on-resistance for minimized power loss
- Low gate threshold voltage for efficient drive
- Low input capacitance for fast switching
- Totally lead-free and fully RoHS compliant
Applications
- General purpose interfacing switch
- Power management functions
Procurement Notes
Verify the specific ordering suffix to confirm packaging quantity. The -13 suffix indicates a tape and reel quantity of 10,000 units. Confirm the package type matches the required TSOT26 footprint. Ensure compliance with environmental directives such as RoHS 3 and halogen-free requirements before finalizing procurement.
Selection Notes
Select this component for applications requiring a compact P-channel MOSFET with low on-state resistance. Consider the thermal characteristics and safe operating area when designing for high-current loads. Verify that the gate drive voltage aligns with the specified thresholds for optimal RDS(ON) performance.
Part Context
This part belongs to the DMP series of P-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are designed for high-efficiency power management applications. The TSOT26 package provides a small form factor suitable for space-constrained designs.
Replacement Considerations
Check datasheets for alternative P-channel MOSFETs with similar -20V BVDSS and comparable RDS(ON) values. Ensure pinout compatibility with the TSOT26 package if substituting directly.
