ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 3.2A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：3.2A (Ta)
- Rds On (Max) @ Id, Vgs：75mOhm @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12.7nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds：443pF @ 10V
- Power - Max：820mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UDFN Exposed Pad
- Supplier Device Package：U-DFN2020-6 (Type B)
- Grade：-
- Qualification：-
Download product information
Overview
The DMP2110UFDB-13 is a dual P-channel enhancement mode MOSFET in a U-DFN2020-6 package. It features a -20V drain-source voltage and a maximum continuous drain current of -3.2A at +25°C. The on-resistance is 75mΩ at VGS=-4.5V and 110mΩ at VGS=-2.5V. Total power dissipation is 0.82W with a thermal resistance of 153°C/W. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Dual P-channel configuration for compact load switching
- Low profile design with a maximum height of 0.6mm
- Optimized for high-efficiency power management applications
Applications
- Load switches
- Power management functions
- Portable power adaptors
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging format. Confirm that the U-DFN2020-6 (Type B) physical dimensions match the target PCB footprint requirements. Ensure compliance with RoHS 3 and halogen-free specifications if required by the end product regulations.
Selection Notes
Select this component when space constraints require a low-profile dual MOSFET solution. Evaluate the 75mΩ on-resistance against the specific gate drive voltage available in the system. Consider the 0.82W power dissipation limit and ensure adequate copper area on the PCB to maintain safe junction temperatures during operation.
Part Context
This device belongs to the DMP series of dual P-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes a U-DFN2020-6 surface-mount package designed to minimize PCB footprint while maintaining robust electrical performance for portable electronics and power management circuits.
Replacement Considerations
DMP2110UFDB-7
FAQ
What is the maximum height of the DMP2110UFDB-13 package?
The maximum height of the U-DFN2020-6 package is 0.6mm.
Is there an automotive-compliant version of this part?
Yes, an automotive-compliant part is available under the separate datasheet designation DMP2110UFDBQ.
What is the typical input capacitance at VDS = -10V?
The typical input capacitance is 443pF when measured at VDS = -10V and f = 1.0MHz.
