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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 1.8A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：1.8A (Ta)
- Rds On (Max) @ Id, Vgs：150mOhm @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：443pF @ 6V
- Power - Max：740mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-26
- Grade：-
- Qualification：-
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Overview
The DMP2110UVT-7 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated in a TSOT26 package. It features a drain-source voltage (V_DSS) of -20 V and continuous drain current (I_D) of -1.8 A at +25°C. The maximum on-resistance (R_DS(ON)) is 150 mΩ at V_GS = -4.5 V, 200 mΩ at -2.5 V, and 240 mΩ at -1.8 V. Gate threshold voltage (V_GS(TH)) ranges from -0.45 V to -1.0 V. Input capacitance (C_iss) is typically 443 pF, with total gate charge (Q_g) at 6.0 nC. Operating temperature spans -55°C to +150°C.
Feature Summary
- Dual configuration providing two independent P-channel enhancement mode MOSFETs within a single compact package.
- Optimized for low on-state resistance to support high-efficiency power management applications.
- Low gate threshold voltage enabling effective drive compatibility with standard logic levels.
- Designed to maintain superior switching performance alongside minimized conduction losses.
Applications
- General purpose interfacing switch
- Power management functions
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm that the component meets required environmental compliance standards such as RoHS and halogen-free definitions. Ensure the selected variant matches the intended thermal and electrical requirements for the target application design.
Selection Notes
Select this component based on the requirement for dual P-channel isolation in a minimal footprint. Evaluate the R_DS(ON) values at specific gate drive voltages to ensure adequate efficiency. Consider the thermal resistance characteristics and package limitations when designing for continuous or pulsed current loads.
Part Context
This device belongs to the DMP series of dual P-channel MOSFETs from Diodes Incorporated. It utilizes a TSOT26 case style designed for surface mount technology. The product line focuses on minimizing on-resistance while maintaining fast switching speeds for modern electronic systems.
Replacement Considerations
Consult official manufacturer substitution guides for verified alternatives. Cross-reference pinouts, electrical ratings, and package dimensions before implementation.
FAQ
What is the maximum continuous drain current rating?
The maximum continuous drain current is -1.8 A at an ambient temperature of +25°C.
How many channels are integrated into this package?
The DMP2110UVT integrates two independent P-channel MOSFET channels.
What is the typical input capacitance value?
The typical input capacitance (C_iss) is 443 pF under specified test conditions.
