DMP2110UVTQ-13

$0.11

Description：MOSFET 2P-CH 20V 1.8A TSOT26
Series：-

SKU:0af19bf51fa7 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 20V 1.8A TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：1.8A (Ta)
Rds On (Max) @ Id, Vgs：150mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：443pF @ 6V
Power - Max：740mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-23-6 Thin, TSOT-23-6
Supplier Device Package：TSOT-26
Grade：Automotive
Qualification：AEC-Q101

Download product information

DMP2110UVTQ-13

Overview

The DMP2110UVTQ is a dual P-channel enhancement mode MOSFET in a TSOT26 package. It features a drain-source voltage of -20V and maximum on-resistance values of 150mΩ at VGS=-4.5V, 200mΩ at VGS=-2.5V, and 240mΩ at VGS=-1.8V. Continuous drain current reaches -1.8A at +25°C and -1.4A at +70°C. The device supports an operating temperature range from -55°C to +150°C.

Feature Summary

Dual P-channel configuration for high-efficiency power management
Low on-state resistance with superior switching performance
Low gate threshold voltage and low input capacitance
Qualified for automotive applications under AEC-Q101 standards

Applications

General purpose interfacing switch
Power management functions
Automotive electronic systems requiring specific change control

Procurement Notes

Verify the component matches Diodes Incorporated part number DMP2110UVTQ-13. Confirm the ordering suffix indicates tape and reel packaging containing 10,000 units. Ensure the manufacturer source is authorized to guarantee compliance with RoHS directives and IATF 16949 manufacturing requirements.

Selection Notes

Select this component for designs requiring a compact dual P-channel solution. Evaluate thermal resistance parameters against the expected ambient temperature and duty cycle. Verify that the gate drive voltage meets the minimum threshold required to achieve the specified low on-resistance levels.

Part Context

This component belongs to the DMP series of dual P-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes a TSOT26 case design with molded plastic construction. The product line emphasizes lead-free and halogen-free specifications for environmental compliance.

Replacement Considerations

Consult official documentation for verified substitute part numbers. Cross-reference electrical characteristics and pin configurations before implementation.