DMP2160UFDB-7R

DMP2160UFDB-7R

  • Description:MOSFET P-CH SOT23
  • Series:*

SKU:f1bce89b8648 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET P-CH SOT23
  • Series:*
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Technology:-
  • Configuration:-
  • FET Feature:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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DMP2160UFDB-7R

Overview

The DMP2160UFDB-7R is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates two independent P-channel MOSFETs within a single SuperSOT-6 surface-mount package. The device is engineered for low on-resistance and fast switching performance, making it suitable for power management applications requiring compact footprints and efficient current handling in dual-channel configurations.

Feature Summary

  • Integrates two independent P-channel enhancement mode MOSFETs into a single compact package
  • Designed for low on-resistance to minimize conduction losses
  • Optimized for fast switching speeds in power management circuits

Applications

  • Power management integrated circuits (PMIC)
  • Battery protection circuits
  • Load switch applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm package type and tape-and-reel specifications. Ensure the component matches the required voltage and current ratings for the target application. Cross-reference the part number with authorized distributors to confirm authenticity and availability. Check for any recent revisions or obsolescence notices from Diodes Incorporated before finalizing procurement decisions.

Selection Notes

Select this component when a dual P-channel configuration is required in a minimal footprint. Evaluate the total on-resistance and thermal dissipation capabilities against the system's load requirements. Consider the SuperSOT-6 package constraints for PCB layout and heat sinking. Compare alternative dual MOSFET options if specific electrical parameters differ significantly from the design specifications.

Part Context

This component belongs to Diodes Incorporated's portfolio of dual MOSFET solutions designed for space-constrained power applications. The SuperSOT-6 package provides a small outline suitable for high-density board layouts. It serves as an alternative to discrete dual MOSFET arrangements, simplifying assembly and reducing overall system size in portable and industrial electronics.

Replacement Considerations

Direct substitutes include other dual P-channel MOSFETs in SuperSOT-6 packages from Diodes Incorporated, such as the DMP2160UFDB-7. Verify pin compatibility and electrical characteristics before substitution.

DMP2160UFDB-7RDMP2160UFDB-7R

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