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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 1.7A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：1.7A
- Rds On (Max) @ Id, Vgs：200mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：184pF @ 10V
- Power - Max：660mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UFDFN Exposed Pad
- Supplier Device Package：U-DFN1616-6 (Type F)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMP2200UFCL-7 is a dual P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a U-DFN1616-6 (Type F) package. It features a drain-source voltage of -20V and a continuous drain current of -1.7A at +25°C. The maximum on-resistance is 200mΩ at VGS = -4.5V and -2.0A, rising to 390mΩ at VGS = -1.8V and -0.24A. Total gate charge is 2.2nC at VGS = -4.5V and VDS = -10V. Input capacitance is 184pF at VDS = -10V.
Feature Summary
- Dual P-channel configuration with integrated ESD protection diodes for each gate terminal.
- Low RDS(ON) performance designed to minimize conduction losses in power paths.
- Thermally efficient U-DFN1616-6 package with an off-board profile of 0.5mm.
- Qualified to AEC-Q101 standards for high reliability applications.
Applications
- Battery disconnect switches
- Load switching for power management functions
Procurement Notes
Verify the component against the official Diodes Incorporated datasheet DS36619 Rev. 4-2. Confirm the marking code matches the specified date code key and product type. Ensure the package corresponds to the U-DFN1616-6 Type F outline dimensions. Validate that the device meets the required electrical characteristics for your specific circuit design.
Selection Notes
Select this component when a compact dual P-channel solution is required for low-voltage power switching. The U-DFN1616-6 package offers a small footprint suitable for space-constrained designs. Consider the thermal resistance values provided in the datasheet for heat dissipation requirements under continuous load conditions.
Part Context
This part belongs to the DMP2200 series of dual P-channel MOSFETs manufactured by Diodes Incorporated. The series includes variants such as the DMP2200UDW-7 and DMP2200UFCL-13, which share similar electrical characteristics but differ in packaging options like SOT363 or different reel configurations.
Replacement Considerations
Direct substitutes include other dual P-channel MOSFETs in the U-DFN1616-6 package with matching -20V ratings and comparable RDS(ON) specifications. Verify pinout compatibility and thermal performance before substitution.
FAQ
What is the maximum operating junction temperature?
The maximum operating and storage temperature range is -55°C to +150°C.
Is the device lead-free?
Yes, the device is totally lead-free and fully RoHS compliant.
What is the gate-source voltage rating?
The maximum gate-source voltage is ±8V.
