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Product Detailed Parameters
- Description：MOSFET P-CH 20V 1.5A SOT323
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：150mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：320 pF @ 16 V
- FET Feature：-
- Power Dissipation (Max)：250mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The DMP2240UW-7 is a P-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a SOT-323 surface-mount package with three terminals. The device supports a drain-source voltage of -20 V and a continuous drain current of -1.5 A at 25°C, extending to -1.0 A at 70°C. The maximum power dissipation is 250 mW. On-resistance values are specified as 150 mΩ at VGS = -4.5V, 200 mΩ at VGS = -2.5V, and 240 mΩ at VGS = -1.8V. The gate threshold voltage is limited to a maximum of 1 V. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- P-channel enhancement mode MOSFET configuration
- Low on-resistance characteristics across multiple gate voltages
- Very low gate threshold voltage for efficient drive
- Qualified to AEC-Q101 standards for high reliability
Applications
- Power management circuits
- Load switch applications
- Battery protection systems
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging format containing 3000 units per reel. Confirm that the component meets RoHS compliance requirements and utilizes lead-free design principles as documented in the manufacturer's specifications. Ensure the procurement channel is authorized to maintain product integrity and warranty coverage.
Selection Notes
Select this component when a compact P-channel solution is required for low-voltage switching applications. The SOT-323 package offers space efficiency for dense board layouts. Consider the thermal resistance and power dissipation limits relative to the ambient operating conditions. Verify that the gate drive voltage aligns with the specified on-resistance performance curves for optimal efficiency.
Part Context
This part belongs to the DMP series of P-channel MOSFETs from Diodes Incorporated. It is designed for general-purpose switching and amplification tasks in portable electronics and battery-powered devices. The device integrates standard enhancement mode operation within a molded plastic case rated UL 94V-0 for flammability.
Replacement Considerations
Consult official substitution lists or cross-reference databases for verified alternatives. Ensure any replacement matches the pinout, voltage ratings, and package dimensions of the SOT-323 form factor.
