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The DMP2900UDWQ-13 is a dual p-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates two independent p-channel MOSFETs within a single SOT363 surface-mount package. The device features a drain-source voltage (BVDSS) of -20V and a maximum continuous drain current (ID) of -0.63A at +25°C. Static drain-source on-resistance (RDS(ON)) is specified as 0.75Ω maximum at VGS = -4.5V and ID = -430mA, and 1.05Ω maximum at VGS = -2.5V and ID = -300mA. Total power dissipation is rated at 0.37W steady state at +25°C with a thermal resistance (RθJA) of 340°C/W.
Verify the specific ordering suffix '-13' to confirm the 10,000-unit tape and reel packaging configuration. Ensure that the required automotive qualification standards, including AEC-Q101 compliance and PPAP capability, align with your project specifications before finalizing procurement.
Select this component when space-constrained designs require dual p-channel switching capabilities in an ultra-small SOT363 footprint. Consider its low gate threshold voltage and fast switching speed for efficient power management applications where minimizing on-state resistance is critical for overall system efficiency.
This part belongs to Diodes Incorporated's advanced generation MOSFET lineup designed to minimize on-state resistance while maintaining superior switching performance. It is specifically engineered for high-efficiency power management applications, offering a compact solution for integrating multiple switching functions into a single package.
Consult official Diodes Incorporated documentation for verified substitute part numbers. Cross-referencing should strictly adhere to manufacturer-approved alternatives to ensure compatibility with electrical characteristics and physical dimensions.
Yes, the DMP2900UDWQ is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.
The maximum drain-source voltage (BVDSS) rating for the DMP2900UDWQ is -20V.
Yes, the device includes an integrated gate protection diode and is ESD protected.