DMP2900UDWQ-13

DMP2900UDWQ-13

$0.05
  • Description:MOSFET 2P-CH 20V 0.63A SOT363
  • Series:-

SKU:31556e959210 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2P-CH 20V 0.63A SOT363
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:630mA (Ta)
  • Rds On (Max) @ Id, Vgs:750mOhm @ 430mA, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:0.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:49pF @ 16V
  • Power - Max:370mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SOT-363
  • Grade:Automotive
  • Qualification:AEC-Q101

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DMP2900UDWQ-13

Overview

The DMP2900UDWQ-13 is a dual p-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates two independent p-channel MOSFETs within a single SOT363 surface-mount package. The device features a drain-source voltage (BVDSS) of -20V and a maximum continuous drain current (ID) of -0.63A at +25°C. Static drain-source on-resistance (RDS(ON)) is specified as 0.75Ω maximum at VGS = -4.5V and ID = -430mA, and 1.05Ω maximum at VGS = -2.5V and ID = -300mA. Total power dissipation is rated at 0.37W steady state at +25°C with a thermal resistance (RθJA) of 340°C/W.

Feature Summary

  • Dual P-Channel Enhancement Mode MOSFET
  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Complementary Pair MOSFET
  • Ultra-Small Surface Mount Package
  • ESD Protected
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free
  • AEC-Q101 Qualified

Applications

  • Battery operated systems
  • Solid-state relays
  • Drivers for relays, solenoids, lamps, hammers, displays, memories, transistors
  • Power supply converter circuits

Procurement Notes

Verify the specific ordering suffix '-13' to confirm the 10,000-unit tape and reel packaging configuration. Ensure that the required automotive qualification standards, including AEC-Q101 compliance and PPAP capability, align with your project specifications before finalizing procurement.

Selection Notes

Select this component when space-constrained designs require dual p-channel switching capabilities in an ultra-small SOT363 footprint. Consider its low gate threshold voltage and fast switching speed for efficient power management applications where minimizing on-state resistance is critical for overall system efficiency.

Part Context

This part belongs to Diodes Incorporated's advanced generation MOSFET lineup designed to minimize on-state resistance while maintaining superior switching performance. It is specifically engineered for high-efficiency power management applications, offering a compact solution for integrating multiple switching functions into a single package.

Replacement Considerations

Consult official Diodes Incorporated documentation for verified substitute part numbers. Cross-referencing should strictly adhere to manufacturer-approved alternatives to ensure compatibility with electrical characteristics and physical dimensions.

FAQ

Is the DMP2900UDWQ suitable for automotive applications?

Yes, the DMP2900UDWQ is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.

What is the maximum drain-source voltage rating?

The maximum drain-source voltage (BVDSS) rating for the DMP2900UDWQ is -20V.

Does the DMP2900UDWQ include internal protection features?

Yes, the device includes an integrated gate protection diode and is ESD protected.

DMP2900UDWQ-13DMP2900UDWQ-13
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