ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET BVDSS: 8V~24V X1-DFN1006-
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：990mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：750mOhm @ 430mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.7 nC @ 4.5 V
- Vgs (Max)：±6V
- Input Capacitance (Ciss) (Max) @ Vds：49 pF @ 16 V
- FET Feature：-
- Power Dissipation (Max)：550mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：X1-DFN1006-3
- Package / Case：3-UFDFN
Download product information
Overview
The DMP2900UFBQ-7B is a P-channel enhancement mode MOSFET in an X1-DFN1006-3 package. It features a drain-source voltage (V_DSS) of -20V and a gate-source voltage (V_GSS) of ±6V. The static drain-source on-resistance (R_DS(on)) is 0.75Ω max at V_GS = -4.5V and 1.05Ω max at V_GS = -2.5V. Continuous drain current (I_D) is -0.99A at +25°C. Pulsed drain current (I_DM) reaches -2.6A. Total power dissipation is 0.55W on minimum pads and 1.11W with a copper plate. Thermal resistance (R_θJA) is 229°C/W and 113°C/W respectively. Operating temperature range is -55°C to +150°C.
Feature Summary
- Designed for high-efficiency power management with minimized on-state resistance and superior switching performance.
- Features a compact footprint significantly smaller than standard SOT23 packages.
- Includes ESD protection on the gate terminal.
- Qualified for automotive applications under AEC-Q101 standards.
Applications
- Load switch circuits
- High-efficiency power management systems
Procurement Notes
Verify the specific ordering suffix '-7B' against the manufacturer's official documentation to confirm packing details, as packaging configurations can vary. Ensure the component meets RoHS 3 and halogen-free requirements if specified by your design constraints. Confirm that the X1-DFN1006-3 package dimensions align with your PCB layout guidelines before finalizing procurement.
Selection Notes
Select this component for applications requiring a small form factor P-channel MOSFET with low on-resistance. Consider the -20V rating and -0.99A continuous current limits when designing load switches. Evaluate thermal performance based on the specific PCB copper area available, as power dissipation capabilities vary significantly between minimum pad layouts and larger copper plates.
Part Context
This part belongs to Diodes Incorporated's DMP series of P-channel MOSFETs. It utilizes the X1-DFN1006-3 package, which offers a reduced footprint compared to traditional SOT23 packages. The device is manufactured in IATF 16949 certified facilities and is suitable for automotive applications requiring specific change control protocols.
Replacement Considerations
No public substitute part numbers are documented in the source material.
FAQ
What is the maximum pulsed drain current for the DMP2900UFBQ?
The maximum pulsed drain current is -2.6A, measured with a 10μs pulse and a duty cycle of 1%.
Is the DMP2900UFBQ qualified for automotive use?
Yes, the DMP2900UFBQ is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.
