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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 0.85A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：850mA (Ta)
- Rds On (Max) @ Id, Vgs：750mOhm @ 430mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：49pF @ 16V
- Power - Max：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The DMP2900UV is a dual P-channel enhancement mode MOSFET in an SOT563 package. It features a -20V drain-source voltage rating and low on-resistance, specified as 0.75Ω max at VGS = -4.5V with -0.85A continuous current. The device offers fast switching speeds, low gate threshold voltage, and ESD protected gates. Electrical characteristics include a typical input capacitance of 49pF and total gate charge of 0.7nC. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Dual P-Channel MOSFET configuration
- Low On-Resistance for high efficiency
- Fast Switching Speed
- ESD Protected Gate
Applications
- DC-DC Converters
- Load Switch
- Power Management Functions
Procurement Notes
Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging quantity and reel specifications. Confirm that the component meets all required environmental compliance standards, including RoHS and halogen-free requirements, prior to final procurement decisions.
Selection Notes
Select this component for applications requiring compact dual P-channel switching solutions. Evaluate thermal resistance parameters based on the specific PCB copper area and mounting conditions. Ensure the gate drive voltage aligns with the specified thresholds to achieve optimal on-resistance performance.
Part Context
This component belongs to the DMP2900 series of advanced dual MOSFETs designed by Diodes Incorporated. It utilizes Trench MOSFET technology to minimize on-state resistance while maintaining superior switching performance. The SOT563 case material provides a green molding compound suitable for surface-mount assembly.
Replacement Considerations
Consult official manufacturer substitution guides for verified alternatives. Cross-reference pinouts and electrical ratings carefully when considering equivalent components from other manufacturers.
