DMP3013SFK-13

$0.18

Description：MOSFET P-CH 30V 10.5A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:39a3945f0135 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 10.5A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：10.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：14mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：33.7 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：1674 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1W (Ta), 19.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2523-6
Package / Case：6-PowerUDFN

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DMP3013SFK-13

Overview

The DMP3013SFK-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2523-6 surface-mount package with an integrated gate protection diode. The device supports a drain-source voltage of -30V and offers low on-resistance, rated at a maximum of 14mΩ at VGS = -10V and 25mΩ at VGS = -4.5V. Continuous drain current capabilities are specified as -10.5A at TA = +25°C and -8.0A at VGS = -4.5V. Total power dissipation reaches 1.0W in free air and up to 19.5W when mounted to a case at +25°C.

Feature Summary

Integrated gate protection diode for enhanced reliability
Low input capacitance and leakage characteristics
100% unclamped inductive switching tested in production
Totally lead-free and fully RoHS compliant

Applications

Load Switch
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets the required UL flammability classification rating of 94V-0 and moisture sensitivity level 1 per J-STD-020 standards. Ensure compatibility with NiPdAu over copper leadframe terminal finishes for soldering processes.

Selection Notes

Select this component for high-efficiency power management applications requiring minimized on-state resistance while maintaining superior switching performance. Consider the thermal resistance values of 126 °C/W (ambient) and 6.4 °C/W (case) when designing heat dissipation strategies. Evaluate the gate threshold voltage range of -1.0V to -3.0V against the available drive voltages in the target circuit design.

Part Context

This part belongs to the DMP3013 series of P-channel MOSFETs from Diodes Incorporated. It utilizes the U-DFN2523-6 case style, which provides a compact footprint suitable for space-constrained designs. The product summary indicates it is designed to balance low RDS(ON) with robust switching capabilities.

Replacement Considerations

Consult official manufacturer documentation for confirmed substitute part numbers. Verify pinout compatibility and electrical parameter equivalence before implementation.