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Product Detailed Parameters
- Description：LINEAR IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：11.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：13.5mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id：2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：18 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：1015 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：800mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type E)
- Package / Case：6-PowerUDFN
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Overview
The DMP3014SFDE-7 is a surface-mount P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a U-DFN2020-6 (Type E) package with six terminals. The device features a drain-source breakdown voltage of 30 V and supports continuous drain current ratings up to 8.7 A at ambient temperature. Key electrical characteristics include a maximum on-resistance of 15 mΩ at 10 V gate drive, a gate charge of 19.6 nC, and an input capacitance of 1204 pF. It operates within a junction temperature range of -55°C to +150°C and dissipates up to 2 W of power.
Feature Summary
- Single P-channel configuration for efficient high-side switching applications
- Low on-resistance design minimizes conduction losses in power paths
- Enhancement mode operation allows direct logic interface compatibility
- Compact U-DFN2020-6 package facilitates automated surface-mount assembly
Applications
- DC-DC converter output stages
- Power management integrated circuit load switches
- Battery protection circuits
- Motor control driver interfaces
Procurement Notes
Verify the specific suffix '7' corresponds to the standard tape-and-reel packaging format required for your pick-and-place equipment. Confirm that the U-DFN2020-6 footprint matches your PCB layout exactly, paying attention to thermal pad dimensions. Ensure component authenticity through authorized distribution channels to avoid counterfeit devices affecting reliability.
Selection Notes
Select this component when a compact P-channel solution is required for 30 V systems with moderate current demands. Compare the 15 mΩ on-resistance against alternative packages to ensure thermal performance meets system constraints. Verify that the 10 V gate drive requirement aligns with your controller's output voltage levels for optimal switching efficiency.
Part Context
This part belongs to the DMP30xx series of P-channel MOSFETs from Diodes Incorporated, designed for general-purpose power switching. The SFDE suffix indicates the specific U-DFN2020-6 Type E package variant. It serves as a discrete replacement for integrated load switches in cost-sensitive consumer and industrial electronics where board space is limited.
Replacement Considerations
Check datasheets for equivalent parts offering similar 30 V ratings and comparable Rds(on) values. Ensure substitute components match the U-DFN2020-6 footprint or require re-layout. Verify that gate threshold voltages and total gate charges are compatible with existing drive circuits.
