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Product Detailed Parameters
- Description：MOSFET P-CH 30V 11A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：11A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：12mOhm @ 11.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：51 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：2147 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI3333-8 (Type UX)
- Package / Case：8-PowerVDFN
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Overview
The DMP3018SFVQ-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 11 A. The device offers a maximum on-resistance (Rds(on)) of 12 mΩ at Vgs = -10 V and 21 mΩ at Vgs = -4.5 V. Gate charge (Qg) is specified at 51 nC. Power dissipation reaches 30 W, with an operating temperature range from -55°C to +150°C junction temperature. It is housed in a PowerDI3333-8 package.
Feature Summary
- Superior switching performance suitable for high-efficiency power-management applications
- Low on-resistance characteristics for reduced conduction losses
- High current capability design
Applications
- High-efficiency power management systems
- DC-DC converter circuits
- Load switch applications
Procurement Notes
Verify component authenticity through authorized Diodes Incorporated distributors or certified suppliers. Request original manufacturer datasheets and test reports to confirm specifications match the official documentation. Ensure packaging integrity and traceability records are provided to mitigate counterfeiting risks during acquisition.
Selection Notes
Select this component for designs requiring robust P-channel switching with low Rds(on) at standard logic levels. Consider the 30 V rating and 11 A current capacity against thermal constraints within the PowerDI3333-8 package. Evaluate gate drive requirements against the 51 nC charge specification for optimal switching speed and efficiency.
Part Context
This part belongs to the DMP3018 series of P-channel MOSFETs from Diodes Incorporated. It utilizes the PowerDI3333-8 surface-mount package, designed for compact PCB layouts. The series targets modern portable and industrial electronics needing efficient power control solutions with reliable thermal performance.
Replacement Considerations
DMP3018SFV-13 is a similar variant within the same family. Verify pin compatibility and specific electrical tolerances before substitution. Note that DMP3018SFVQ-13 status may be obsolete; check current manufacturing availability.
