DMP3036SSD-13

$1.00

Description：MOSFET 2P-CH 30V 18.0A 8SO
Series：-

SKU:35802aca6a63 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 30V 18.0A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：18.0A (Tc)
Rds On (Max) @ Id, Vgs：20mOhm @ 9A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：16.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1931pF @ 15V
Power - Max：1.2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

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DMP3036SSD-13

Overview

The DMP3036SSD-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated, housed in an SO-8 package. It features a drain-source voltage (Vdss) of -30 V and a gate-source voltage (Vgss) of ±25 V. The device provides a continuous drain current (Id) of -18.0 A at TC = +25°C and -14.3 A at TC = +70°C. Static drain-source on-resistance (Rds(on)) is rated at a maximum of 20 mΩ at Vgs = -10 V and 29 mΩ at Vgs = -5 V. Total power dissipation reaches 1.2 W at TA = +25°C with a thermal resistance junction-to-ambient of 104 °C/W.

Feature Summary

Low on-resistance for high efficiency
Fast switching speed
Low input capacitance
Totally lead-free and fully RoHS compliant

Applications

DC-DC Converters
Power Management Functions
Backlighting

Procurement Notes

Verify the component against the official datasheet DS37349 Rev.1-2 to confirm specifications match design requirements. Ensure the SO-8 package variant aligns with PCB layout constraints. Confirm compliance with environmental directives such as RoHS and halogen-free standards before finalizing procurement decisions.

Selection Notes

Select this component for applications requiring low on-state resistance and superior switching performance. Evaluate thermal management needs based on the specified thermal resistance values. Consider the operating temperature range from -55°C to +150°C for suitability in various environments.

Part Context

This part belongs to the DMP3036 series of P-channel enhancement mode MOSFETs. It is designed to minimize on-state resistance while maintaining fast switching capabilities. The SO-8 case utilizes a molded plastic compound with UL flammability classification rating 94V-0.

Replacement Considerations

Cross-reference with other P-channel MOSFETs featuring similar -30V ratings and SO-8 packaging. Verify pinout compatibility and electrical parameters like Rds(on) and Id before substitution.