DMP3165LQ-13

$0.06

Description：MOSFET BVDSS: 25V~30V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:d0ae72c47879 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：90mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：300 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：800mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMP3165LQ-13

Overview

The DMP3165LQ-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source breakdown voltage and a maximum continuous drain current of -3.3A at +25°C. The device offers a typical on-resistance of 90mΩ at VGS = -10V and 134mΩ at VGS = -4.5V. It operates within a temperature range of -55°C to +150°C, with a total power dissipation of 1.3W in steady state. The component utilizes an SOT-23 package.

Feature Summary

Designed for high efficiency power management applications through minimized on-state resistance and superior switching performance.
Qualified for automotive applications requiring specific change control, meeting AEC-Q101 standards and PPAP capability.
Manufactured in IATF 16949 certified facilities with totally lead-free, fully RoHS compliant, and halogen/antimony free construction.

Applications

DC-DC Converters
Power Management Functions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10000-unit tape and reel packaging configuration. Confirm that the AEC-Q101 qualification and PPAP capability requirements align with your automotive supply chain standards. Ensure the SOT-23 package dimensions match your PCB footprint design guidelines before finalizing procurement.

Selection Notes

Select this component when a single P-channel MOSFET with low on-resistance and fast switching speeds is required for compact designs. The SOT-23 package suits space-constrained surface mount applications. Consider the thermal resistance characteristics and power dissipation limits relative to your expected operating junction temperatures and ambient conditions.

Part Context

This part belongs to the DMP series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It represents a newer generation designed to balance low on-state resistance with efficient switching capabilities. The 'LQ' designation indicates automotive-grade qualification, while the '-13' suffix specifies the standard bulk tape and reel packaging format used for automated assembly.