DMP31D1UVT-7

Overview

The DMP31D1UVT is a dual P-channel enhancement mode MOSFET in a TSOT26 package. It features a drain-source voltage (BVDSS) of -30V and a continuous drain current (ID) of -0.76A at +25°C. The static drain-source on-resistance (RDS(ON)) is 1000mΩ at VGS = -4.5V and 1500mΩ at VGS = -2.5V. Operating temperature ranges from -55°C to +150°C.

Feature Summary

• Dual P-channel configuration for high-efficiency power management
• Minimized on-state resistance with superior switching performance
• Low input capacitance and fast switching speed
• Totally lead-free, fully RoHS compliant, and halogen/antimony free

Applications

• Backlighting
• DC-DC converters
• Power-management functions

Procurement Notes

Verify the specific ordering suffix (-7 or -13) against the required packing quantity and carrier type. Confirm that the component meets all applicable automotive qualification standards if intended for such environments. Ensure design compliance with the manufacturer's standard terms and conditions regarding product selection and application safety.

Selection Notes

Select this component for applications requiring compact dual P-channel switching solutions. Evaluate thermal constraints based on the specified junction-to-ambient thermal resistance values. Verify gate drive voltage levels against the threshold and on-resistance characteristics to ensure optimal conduction efficiency within the circuit design parameters.

Part Context

This device belongs to Diodes Incorporated's new generation MOSFET lineup designed to minimize on-state resistance while maintaining switching performance. It utilizes a molded plastic TSOT26 package with matte tin annealed terminals over a copper leadframe, suitable for surface mount assembly on FR-4 substrates.

Replacement Considerations

Consult official documentation for verified substitute part numbers. Cross-reference electrical parameters and package dimensions when evaluating alternatives.