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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V SOT23 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：580mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：900mOhm @ 420mA, 10V
- Vgs(th) (Max) @ Id：2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.36 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：19 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：430mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMP31D7L-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT23 package. It features a drain-source voltage (BVDSS) of -30V and a maximum continuous drain current (ID) of -0.58A at +25°C. The device exhibits a static drain-source on-resistance (RDS(ON)) of 0.9Ω max at VGS = -10V and 1.7Ω max at VGS = -4.5V. Total gate charge (Qg) is typically 0.36nC, with input capacitance (Ciss) of 19pF. Operating temperature range spans from -55°C to +150°C.
Feature Summary
- Low on-state resistance for high-efficiency power management
- Fast switching speed with low input/output leakage
- ESD protected gate structure
- Totally lead-free and fully RoHS compliant
Applications
- DC-DC Converters
- Power Management Functions
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packing configuration as documented in the manufacturer's ordering information. Confirm that the component meets the required environmental standards, specifically the halogen and antimony-free 'Green' device definition provided by Diodes Incorporated. Ensure compatibility with the specified SOT23 surface-mount package dimensions during PCB layout design.
Selection Notes
Select this component for applications requiring a compact P-channel MOSFET with a -30V rating. Evaluate the RDS(ON) specifications against the intended gate drive voltage levels, noting the performance difference between -4.5V and -10V drive conditions. Consider the thermal resistance characteristics and safe operating area limits when designing for steady-state or pulsed current loads within the specified junction temperature range.
Part Context
This part belongs to the DMP31D7L series of P-channel enhancement mode MOSFETs from Diodes Incorporated. The series is designed to minimize on-state resistance while maintaining superior switching performance. The product line utilizes a molded plastic SOT23 package with matte tin annealed terminals over a copper leadframe, suitable for automated surface-mount assembly processes.
Replacement Considerations
Consult the manufacturer's documentation for qualified automotive alternatives if AEC-Q101 qualification is required. Verify pinout compatibility and electrical parameter equivalence before substituting with other P-channel MOSFETs in the SOT23 package.
