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The DMP31D7LDW-13 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source breakdown voltage and a maximum continuous drain current of -0.55A at +25°C. The device offers a low on-resistance of 0.9Ω at VGS = -10V and 1.7Ω at VGS = -4.5V. Packaged in an SOT363 surface-mount format, it includes integrated gate protection diodes for each channel.
Verify the specific ordering suffix to confirm packaging quantity. The -13 suffix indicates a tape and reel carrier containing 10,000 units. Confirm that the SOT363 package dimensions align with the target PCB footprint. Ensure compliance with RoHS and halogen-free requirements if mandated by the design specifications.
Select this component when a compact dual P-channel solution is required for low-voltage switching. The SOT363 package provides a small form factor suitable for space-constrained designs. Consider the thermal resistance characteristics and ensure adequate copper area on the PCB to manage heat dissipation during steady-state operation.
This part belongs to the DMP31D7LDW series of dual P-channel MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. An automotive-compliant variant is available under the separate datasheet designation DMP31D7LDWQ.
The automotive-compliant version DMP31D7LDWQ serves as a qualified alternative for automotive applications. Verify pinout compatibility and electrical parameters before substitution.
The maximum continuous drain current is -0.55A at an ambient temperature of +25°C.
Yes, the device features totally lead-free construction and includes ESD protected gates.
The gate threshold voltage ranges from -1V to -2.6V at a drain current of -250μA.