DMP31D7LVQ-7

$0.31

Description：MOSFET 2P-CH 30V 0.62A SOT563
Series：-

SKU:7b3c5a62080d Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 30V 0.62A SOT563
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：620mA (Ta)
Rds On (Max) @ Id, Vgs：900mOhm @ 420mA, 10V
Vgs(th) (Max) @ Id：2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：19pF @ 15V
Power - Max：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：SOT-563
Grade：Automotive
Qualification：AEC-Q101

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DMP31D7LVQ-7

Overview

The DMP31D7LVQ-7 is a dual P-channel enhancement mode MOSFET in an SOT563 package. It features a -30V drain-source voltage rating and low on-resistance of 0.9Ω at VGS=-10V and 1.7Ω at VGS=-4.5V. Continuous drain current reaches -0.62A at +25°C. The device includes internal gate protection diodes, operates from -55°C to +150°C, and supports automotive AEC-Q101 qualification with PPAP capability.

Feature Summary

Dual P-channel configuration with integrated gate protection diodes
Optimized for high-efficiency power management through minimized on-state resistance
Automotive-grade reliability with AEC-Q101 qualification and PPAP support
Totally lead-free and fully RoHS compliant construction

Applications

Motor controls
Power management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix (-7 or -13) to confirm tape and reel quantity requirements. Confirm that the SOT563 package dimensions align with the target PCB footprint. Ensure design compliance with the specified thermal resistance values under actual operating conditions. Validate that the -30V rating meets system voltage headroom needs.

Selection Notes

Select this component for compact dual-switch applications requiring low on-resistance. The SOT563 package suits space-constrained designs. Verify gate drive voltage compatibility with the threshold characteristics. Consider the dual channel layout for simplified schematic design in bridge or load switch configurations.

Part Context

This part belongs to Diodes Incorporated's advanced generation MOSFET portfolio designed for high-efficiency power management. It utilizes silicon technology within a molded plastic SOT563 package. The product line targets automotive and industrial sectors requiring robust switching performance and low conduction losses.

Replacement Considerations

Check pinout compatibility for direct replacement. Verify electrical parameters such as RDS(on) and BVDSS meet or exceed original specifications. Confirm package outline dimensions match the existing PCB layout to avoid mechanical interference during assembly.