DMP4051LK3Q-13

$0.20

Description：MOSFET BVDSS: 31V~40V TO252 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:ee3fcdab1074 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V TO252 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：51mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：674 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.14W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMP4051LK3Q-13

Overview

The DMP4051LK3Q-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -40V drain-source voltage rating and a maximum continuous drain current of -10.5A at +25°C. The device exhibits a low on-state resistance of 51mΩ at VGS = -10V and 85mΩ at VGS = -4.5V. Packaged in a TO-252 (DPAK) surface-mount housing, it supports an operating temperature range from -55°C to +150°C. Key electrical parameters include a gate threshold voltage of -1.0V to -3.0V and a total gate charge of 14nC.

Feature Summary

Designed for high-efficiency power management with minimized on-state resistance and superior switching performance.
Manufactured using lead-free finish materials that are RoHS compliant and free of halogens and antimony.
Verified for reliability through 100% Unclamped Inductive Switch (UIS) testing during production.

Applications

Backlighting circuits
DC-DC converters
Power-management functions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging format containing 2,500 units per carrier. Confirm that the component meets AEC-Q101 qualification requirements if intended for automotive applications requiring specific change control protocols. Ensure the selected package variant matches the required thermal dissipation characteristics for the target PCB layout.

Selection Notes

Select this component for designs requiring a -40V P-channel MOSFET with optimized switching speed and low conduction losses. Evaluate the thermal resistance values against the expected ambient conditions and copper coverage area to ensure junction temperatures remain within the specified limits. Consider the gate charge specifications when designing drive circuits to optimize switching transitions.

Part Context

This part belongs to the DMP4051LK3 series of P-channel enhancement mode MOSFETs. It is designed to balance low on-resistance with fast switching capabilities. The device utilizes a TO-252 package suitable for surface-mount assembly. It is manufactured by Diodes Incorporated and is intended for general-purpose power management applications.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Cross-reference electrical ratings such as voltage, current, and on-resistance to ensure compatibility with existing circuit designs.

FAQ

Is the DMP4051LK3Q-13 qualified for automotive applications?

Yes, the device is qualified to AEC-Q101 standards. For automotive applications requiring specific change control, contact the manufacturer or local representative.