DMP6110SFDF-13

$0.63

Description：MOSFET P-CH 60V 4.2A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4f6716157fdd Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 60V 4.2A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：110mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：969 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.97W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

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DMP6110SFDF-13

Overview

The DMP6110SFDF-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2020-6 (Type F) case with a maximum drain-source voltage of -60V and a continuous drain current of -4.2A at +25°C. The device offers a maximum on-resistance of 110mΩ at VGS = -10V and 130mΩ at VGS = -4.5V. Total gate charge is 17.2nC at VGS = -10V, with an input capacitance of 969pF. It operates within a temperature range of -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
Features low gate threshold voltage and low input/output leakage characteristics.
Constructed with a molded plastic "Green" molding compound that is UL flammability rated 94V-0.
Totally lead-free, fully RoHS compliant, and halogen and antimony free.

Applications

Battery Management Systems
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm the component meets JEDEC standards for high reliability as stated in the datasheet. Ensure the application environment remains within the specified thermal limits and voltage ratings defined in the maximum ratings table.

Selection Notes

Select this component when a P-channel MOSFET with a -60V breakdown voltage and compact U-DFN2020-6 footprint is required. Consider the 110mΩ on-resistance at -10V gate drive for efficiency optimization. Evaluate the thermal resistance values against the expected load current and ambient temperature conditions to ensure safe operation within the junction temperature limits.

Part Context

This part belongs to the DMP6110 series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the U-DFN2020-6 (Type F) surface-mount package. The product is designed for applications requiring low on-resistance and fast switching speeds, serving as a discrete semiconductor solution for power management circuits.

Replacement Considerations

For automotive applications requiring specific change control, refer to the related automotive grade part DMP6110SFDFQ. Verify pinout compatibility and electrical parameters before substituting with other P-channel MOSFETs in the same voltage class.

FAQ

Is the DMP6110SFDF-13 suitable for automotive applications?

The standard DMP6110SFDF-13 is qualified to JEDEC standards for high reliability. For automotive applications requiring specific change control, the automotive-compliant part DMP6110SFDFQ should be used instead.