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Product Detailed Parameters
- Description：MOSFET P-CH 60V 8SOIC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：110mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：19.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1030 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：1.5W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The DMP6110SSS-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -60V drain-source breakdown voltage and a maximum continuous drain current of -4.5A at +25°C. The device exhibits low on-state resistance, rated at a maximum of 110mΩ at VGS = -10V and 130mΩ at VGS = -4.5V. It operates within an ambient temperature range of -55°C to +150°C and is housed in an SO-8 surface-mount package.
Feature Summary
- Low on-resistance for high efficiency power management
- Fast switching speed with low input capacitance
- Qualified to AEC-Q101 standards for high reliability
Applications
- Backlighting
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2500 units per reel. Confirm that the component meets RoHS compliance and is halogen-free as specified in the manufacturer's documentation. Ensure the SO-8 package dimensions align with the target PCB footprint requirements before finalizing procurement.
Selection Notes
Select this component when a single P-channel MOSFET with a -60V rating is required for compact designs. The SO-8 package provides a balance between thermal dissipation and board space efficiency. Consider the gate threshold voltage characteristics for compatibility with standard logic-level control signals in power management circuits.
Part Context
This part belongs to the DMP6110 series of P-channel MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The series targets applications requiring efficient power handling in small form factors, such as portable electronics and industrial control systems.
Replacement Considerations
Check datasheets for alternative P-channel MOSFETs with matching -60V ratings and comparable RDS(ON) values. Verify pinout compatibility for the SO-8 package to ensure direct replacement without PCB redesign. Confirm thermal resistance parameters meet the system's heat dissipation requirements.
