DMP68D1LQ-13

$0.05

Description：2N7002 FAMILY SOT23 T&R 10K
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:e8bbc761c861 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：2N7002 FAMILY SOT23 T&R 10K
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：206mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：7.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.6 nC @ 5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：42 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMP68D1LQ-13

Overview

The DMP68D1LQ-13 is a P-channel enhancement mode MOSFET from Diodes Incorporated, packaged in SOT23. It features a drain-source voltage of -60V and a continuous drain current of -206mA at +25°C. The on-resistance is specified as 7.5Ω at VGS=-10V and 8.0Ω at VGS=-5V. Gate threshold voltage ranges from -0.8V to -2.1V. Total gate charge is 0.6nC, with turn-on delay of 11ns and fall time of 30ns. Power dissipation is 0.5W, operating temperature spans -55°C to +150°C.

Feature Summary

Qualified for automotive applications under AEC-Q101 standards with PPAP capability.
Designed for low input capacitance and fast switching speeds.
Includes ESD protection and exhibits low input/output leakage currents.
Manufactured using lead-free, halogen-free, and antimony-free green materials.

Applications

Motor controls
Power-management functions
Backlighting

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets AEC-Q101 qualification requirements if intended for automotive use. Ensure design parameters align with the maximum ratings provided in the official datasheet DS45112 Rev. 3.

Selection Notes

Select this component for circuits requiring a single P-channel switch in an SOT23 package. Evaluate thermal resistance and power dissipation limits relative to the expected load current. Consider the gate threshold voltage range when designing drive circuits to ensure reliable switching performance across the full operating temperature range.

Part Context

This part belongs to the DMP68D1LQ family of P-channel MOSFETs manufactured by Diodes Incorporated. It is designed to meet stringent automotive reliability standards. The device utilizes silicon technology and is housed in a standard SOT23 surface-mount package suitable for automated assembly processes.

Replacement Considerations

The DMP68D1LQ-7 is a verified substitute offering identical electrical characteristics but packaged in a 3,000-unit tape and reel carrier instead of the 10,000-unit quantity.

FAQ

Is the DMP68D1LQ-13 qualified for automotive applications?

Yes, the DMP68D1LQ is qualified to AEC-Q101 standards and is supported by a PPAP, making it suitable for automotive applications requiring specific change control.